Refinement of CFB/M High Strength Steel Micro-Alloyed with Nb

A novel carbide free bainite/martensite (CFB/M) high strength steel of 1500MPa grade is micro-alloyed with Nb in order to refine the microstructure and improve the toughness. After the steel containing Nb was forged, coarse microstructure and strong transmissibility of structure were found. It is suggested that the large numbers of precipitates of Nb(CN) in the steel makes the structure transmissibility more serious. After solution treatment at 1200°C, both complete annealing twice and isothermal treatment at 600°C twice can eliminate the structure transmissibility and refine the structure. Investigation on refinement of cycle phase transformation shows that excellent effect of the grain refinement is obtained when the heating velocity exceeds some threshold. In addition, the temperature of austenitizing is of little influences on the size of refined austenite grain.

Damage Growth in Si During Self-Ion Irradiation: a Study of Ion Effects Over an Extended Energy Range

Damage nucleation/growth in single-crystal Si during ion irradiation is discussed. For MeV ions, the rate of growth as was well as the damage morphology are shown to vary widely along the track of the ion. This is attributed to a change in the dominant, defect-related reactions as the ion penetrates the crystal. The nature of these reactions were elucidated by studying the interaction of MeV ions with different types of defects. The defects were introduced into the Si crystal prior to high-energy irradiation by self-ion implantation at a medium energy (100 keV). Varied damage morphologies were produced by implanting different ion fluences. Electron microscopy and ion-channeling measurements, in conjunction with annealing studies, were used to characterize the damage. Subtle changes in the predamage morphology are shown to result in markedly different responses to the high-energy irradiation, ranging from complete annealing of the damage to rapid growth. These divergent responses occur over a narrow range of dose (2–3 × 1014 cm-2) of the medium-energy ions; this range also marks a transition in the growth behavior of the damage during the predamaging implantation. A model is proposed which accounts for these observations and provides insight into ion-induced growth of amorphous layers in Si and the role of the amorphous/crystalline interface in this process.

Ion Beam Self Annealing in Thin Silicon Films

ABSTRACTResidual lattice disorder in lμm-thick silicon films as a function of the dose rate of 120 keV Ar+ ion implantations has been investigated. At a fluence of l×1 014 ions/cm2, low dose rates produced a highly damaged surface layer as expected; however, at a dose rate sufficient to locally heat the implanted film to a temperature of approximately 700°K, essentially complete annealing of the lattice disorder was observed. This temperature is significantly less than that normally required for post-implant thermal annealing. Measurements of lattice disorder were based on medium energy Rutherford backscattering and channeling analyses.

Alpha-Recoil Damage in Thorianite and Uraninite: Effect on Dissolution and Time-Scale for Spontaneous Annealing of Damage

Using natural ThO2 and UO2 in which radiation damage has accumulated over geologic periods, we have measured the relative in dissolution rates bicarbonate-carbonate solutions of the actinide isotopes 238U, 234U, 232Th, 230Th, and 228Th. An enhanced dissolution by a factor of 2 to 7 of the short lived (1.9 yr) 228Th relative to that of its structurally incorporated primary isotope 232Th indicates the presence of severe localized atomic displacement damage created by alpha-recoil atoms. In contrast, the relatively small (<20%) isotopic fractionation between the radiogenic 8.0 × 104 yr- 230Th isotope and 232Th, and between the radiogenic 2.5 × 105 yr- 234U isotope and its primary structurally incorporated isotope 238U, suggests the nearly complete annealing of the alpha-recoil damage during a period of less than 105 yr. An estimate of the mean fading time for the leachable damage is 15,000 yr.

Rapid Thermal Annealing of Ion-Implanted Silicon and Gallium Arsenide

ABSTRACTWe have investigated the annealing of ion implantation damage (in the form of amorphous layers and/or the layers containing only dislocation loops) in silicon and gallium arsenide. The annealing of amorphous layers occurs by solid-phase-epitaxial growth and that of dislocation loops involves primarily loop-coalescence as a result of conservative climb and glide processes. The annealing of disolated loops occurs primarily by a bulk diffusion process. Almost a “complete” annealing of displacement damage is possible for shallow implants provided loop–coalescence does not lead to the formation of cross–grid of dislocations. For deep implants, the free surface cannot provide an effective sink for defects as in the case of shallow implants. Dopant profiles can be controlled to less than 1000 Å in layers having good electrical properties. The enhanced diffusion of dopants is observed probably due to entrapment of point defects in the annealed regions.