Effects of Additives on Semiconduction Transformation in Lead Zirconate Titanate Ceramic Induced by Atomic Hydrogen

Effects of additives on the semiconduction transformation of lead zirconate titanate (PZT) during atomic hydrogen charging were investigated. The results showed that the resistivity of the samples decreased by seven orders of magnitude with sixty hours of hydrogen charging in electrolytic without additives. Then with further increasing hydrogen charging time, the resistivity decreased continually, however, much more slowly. Scanning electron microscopy (SEM) showed that the surface structures of PZT were changed significantly upon atomic hydrogen charging. Sodium pyrophosphate (Na4P2O7) and Na2EDTA could effectively affect the semiconduction transformation of PZT as well as the surface structure change. Transmission electron microscopy (TEM) and XRD analysis indicated that there was no new substance formed on the surface of PZT upon atomic hydrogen charging.

EB Induced Stress Relaxation of Tight Network Structure in Silica and Soda Glasses

This paper mainly describes that nano-scale surface structure change in dangling bond density related to free volume caused the reinforcement of inorganic glass irradiated by electron beam. Based on the results of electron spin resonance experiments, EB irradiation enhanced the density of dangling bonds at the glass surface. To confirm the strengthening principle, we have employed EB irradiation of inorganic glass. The EB reinforcement was explained as caused by stress relaxation induced by dangling bonds formation in the tight network structure of silica and soda glasses.

STUDY OF STRUCTURE CHANGES ON THESiSURFACES USING REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION

In order to investigate surface structure change due to phase transition, surface melting, surface segregation and thin film growth, we have developed a new system for reflection high-energy electron diffraction (RHEED) with two pairs of magnetic coils to measure rocking curves in short time. This system is the most suitable tool to determine the structure change with temperature in a wide range, and we studied the dynamical structure change during film growth of Si on Si (111) and the phase transitions of Si (111) and Si (100) surfaces at high temperature.