Research on Switching Performance of Static Induction Thyristors

Physical mechanism for switching state of SITHs was discussed, the two-dimensional turn-off model was proposed, expressions of ton and toffwere mathematical derived. Measures to reduce the switching time of SITHs, such as reducing the gate width WG and n- region width Wn-, doping Boron atoms with higher density,etc.,were put forward and verified by experiments.

The Characteristics of ESD Protection Device Based on Static Induction Thyristors

A novel structure of ESD protection device based on the static induction thyristors (SITh) was in further investigation. Detailed analysis of the negative resistance characteristics of SITh was presented, especially its blocking and conducting states that satisfy the requirements in ESD events. The characteristics of SITh for ESD protection were obtained using the Time Domain Reflectometer (TDR) type of Transmission Line Pulse (TLP) testing system. The results illustrate that SITh for ESD protection has the following advantages: 1) It has a strong ESD stress handing capability (3.75 kV); 2) Its second breakdown current is large enough (2.5 A) to release great ESD current; 3) DC leakage current of SITh is very small (1 μA); 4) SITh can break through the limitations of transitional trigger voltages, whose trigger voltage is dynamically adjustable as well; 5) The ESD response time can be controlled through optimizing device structure of SITh.