Fabrication and characterization of high-voltage AlGaN/GaN HEMTs on silicon substrates (Conference Presentation)

Cubic pyrochlore bismuth zinc niobate thin films are known to exhibit voltage dependent dielectric properties. In this paper, we are demonstrating the fabrication and characterization of interdigital (IDC) and circular patch (CPC) capacitors using the pulsed laser deposited Bi1.5Zn1.0Nb1.5O7 (BZN) thin films on sapphire and platinised silicon substrates respectively. The IDCs fabricated are having 12 fingers of width 12 m each and separated by a gap of 8 m. The CPC are having circular patches with inner radius of 100 m and concentric ground plane with a radius of 300m. The electrical properties of these capacitors were characterized both at low frequencies and at microwave frequencies. The CPC varactors were having a tunability of 25% at 15 Volts. The calculated capacitance of the IDC varactor at 5.3 GHz with 0 V dc bias was 1.1 pF, which has got changed to 0.99 pF by the application of 30 Volts exhibiting a tunability of 10%.

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Fabrication and Characterization of Thin-Barrier $ \hbox{Al}_{0.5}\hbox{Ga}_{0.5}\hbox{N/AlN/GaN}$ HEMTs

IEEE Electron Device Letters ◽

10.1109/led.2011.2143384 ◽

2011 ◽

Vol 32 (7) ◽

pp. 889-891 ◽

Cited By ~ 9

Author(s):

Jonathan G. Felbinger ◽

Martin Fagerlind ◽

Olle Axelsson ◽

Niklas Rorsman ◽

Xiang Gao ◽

...

Keyword(s):

Gan Hemts ◽

Fabrication And Characterization ◽

Thin Barrier

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Fabrication and characterization of InGaN resonant-cavity light-emitting diodes on silicon substrates

physica status solidi (c) ◽

10.1002/pssc.200565359 ◽

2006 ◽

Vol 3 (6) ◽

pp. 2137-2140 ◽

Cited By ~ 3

Author(s):

Shih-Yung Huang ◽

Ray-Hua Horng ◽

Wei-Kai Wang ◽

Don-Sing Wuu

Keyword(s):

Light Emitting Diodes ◽

Resonant Cavity ◽

Silicon Substrates ◽

Light Emitting ◽

Fabrication And Characterization

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Design, Fabrication and Characterization of 10kV/100A 4H-SiC PiN Power Rectifier

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1014.115 ◽

2020 ◽

Vol 1014 ◽

pp. 115-119

Author(s):

Meng Ling Tao ◽

Xiao Chuan Deng ◽

Hao Wu ◽

Yi Wen

Keyword(s):

High Voltage ◽

Voltage Drop ◽

Forward Current ◽

Power Modules ◽

Forward Voltage Drop ◽

Fabrication And Characterization ◽

Power Rectifier ◽

Further Development ◽

The Ideal

A 10kV/100A SiC PiN rectifier with MRM-JTE (multiple-ring modulated junction termination extension) is designed, fabricated and characterized. The optimized MRM-JTE achieves high breakdown capability and extends the optimal JTE dose window. A 100μm thick epitaxial SiC PiN rectifier with a doping concentration of 5×1014cm−3 has been fabricated using a standard TZ-JTE process. A 5.4V forward voltage drop is obtained at 100A forward current. Moreover, a measured breakdown voltage is up to 13.5kV corresponding to about 96% of the ideal parallel plane junction. The fabricated device exhibits a low RON,SP of 3.76mΩ·cm2 at 200A/cm2 , and a high BFOM of 48.5GW/cm2. In addition, the C-V characteristic and reverse recovery switch characteristic are also analyzed. In this paper, the successfully fabrication of high-voltage SiC PiN rectifier provides a further development for high-voltage high-power SiC power modules.

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