Nonlinear Photocarrier Dynamics and the Role of Shallow Traps in Mixed-Halide Mixed-Cation Hybrid Perovskites

<p>We examine the role of surface passivation on carrier trapping and nonlinear recombination dynamics in hybrid metal-halide perovskites by means of excitation correlation photoluminescence (ECPL) spectroscopy. We find that carrier trapping occurs on subnanosecond timescales in both control (unpassivated) and passivated samples, which is consistent within a shallow-trap model. However, the impact of passivation has a direct effect on both shallow and deep traps. Our results reveal that the effect of passivation of deep traps is responsible for the increase of the carrier lifetimes, while the passivation of shallow traps reduces the excitation density required for shallow-trap saturation. Our work demonstrates how ECPL provides details about the passivation of shallow traps beyond those available via conventional time-resolved photoluminescence techniques.</p>

Nonlinear Photocarrier Dynamics and the Role of Shallow Traps in Mixed-Halide Mixed-Cation Hybrid Perovskites

<p>We examine the role of surface passivation on carrier trapping and nonlinear recombination dynamics in hybrid metal-halide perovskites by means of excitation correlation photoluminescence (ECPL) spectroscopy. We find that carrier trapping occurs on subnanosecond timescales in both control (unpassivated) and passivated samples, which is consistent within a shallow-trap model. However, the impact of passivation has a direct effect on both shallow and deep traps. Our results reveal that the effect of passivation of deep traps is responsible for the increase of the carrier lifetimes, while the passivation of shallow traps reduces the excitation density required for shallow-trap saturation. Our work demonstrates how ECPL provides details about the passivation of shallow traps beyond those available via conventional time-resolved photoluminescence techniques.</p>

Flexible thermosensitive films based on shallow-trap persistent luminescence for high-resolution texture imaging of fingerprints even through latex gloves

Here, we have developed a novel thermosensitive technique based on shallow-trap persistent luminescence to achieve high-resolution and long-duration texture imaging of fingerprints even through latex gloves. A thermosensitive flexible film...

Analysis of Logic Inverter Based on Polycrystalline Silicon with Single Grain Boundary

In this paper, we demonstrate the characteristics of a complementary metal-oxide-semiconductor (CMOS) logic inverter based on a polycrystalline-silicon (poly-Si) layer with a single grain boundary (GB). The proposed nanoscale CMOS logic inverter had been constructed on a poly-Si layer with a GB including four kind of traps at the center of the channel. The simulation variables are the acceptor-like deep trap (ADT), the donor-like deep trap (DDT), the acceptor-like shallow trap (AST) and the donor-like shallow trap (DST). The ADT and the DDT much stronger influences on the DC characteristics of the devices than the AST and the DST. The variation of voltage-transfer-curve (VTC) for CMOS devices directly affected the CMOS logic inverter with different traps.