In Situ Synthesis of Polyaniline Based Ceramic Wastes Composites: Dielectric and Electrical Properties

In the present study, ceramic wastes collected from the premises of industrial zone in Peshawar, KP Pakistan were investigated. An effort has been made to recycle and use the ceramic wastes as fillers in polymeric composites. The negative cost ceramic wastes were purified and activated thermally. The elemental composition and pellets of the wastes were investigated through SEM/EDX analysis. Waste/Polyaniline (PANI) composite was synthesized via in-situ free radical polymerization technique. SEM of the composites showed the uniform distribution of fillers particles in the PANI matrix. XRD studies confirmed that the prepared composite material had a face- centered cubic geometry with distinct preferential orientations. Dielectric analysis showed that the materials exhibit active performance at high frequency regions (3MHz to 3GHz) at room temperature. The results show decrease in dielectric losses and capacitance (1.6 pF) at high frequency regions. AC conductivity of the composite has been increased up to 37.95 Scm-1. This revealed the effect of PANI on the ceramic wastes while increasing its conductance performance. This suggests that the composite material can be investigated for use in photovoltaic detectors, electro-responsive capacitors and power applications.

CdSe:In Mid-Infrared Transparent Conductive Films Prospering Uncooled PbSe/CdSe Heterojunction Photovoltaic Detectors

Infrared transparent and conductive coatings (ITCCs) are in significant demand in infrared imaging applications. The combination of high optical transparency in infrared range (1-12 μm) and high electrical conductivity, however,...

Semiconductor Photodetectors

This chapter describes the operating principles of photoconductive and photovoltaic detectors based on III–V semiconductors. The electrical characteristics of both photodiodes and majority carrier barrier structures are discussed starting with the diffusion equation. The chapter outlines the figures of merit used to evaluate the performance of infrared photodetectors including the responsivity, dark current density, and normalized detectivity. It discusses bulk-like and type II superlattice photodetectors and how the multistage arrangement of interband cascade detectors (ICDs) can reduce the dark current density at the expense of a lower responsivity. Detectors that employ intersubband optical transitions, namely, quantum-well infrared photodetectors and quantum cascade detectors, are also discussed. The chapter considers how the dark-current density can be suppressed in resonant-cavity and thin waveguide-based detectors. It concludes with a discussion of the requirements for high-speed operation and an overview of novel types of detectors that draw their inspiration from III–V semiconductor devices.

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8×10 11 Jones at 850 nm light irradiation at room temperature was demonstrated.

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8×10 11 Jones at 850 nm light irradiation at room temperature was demonstrated.

Mixed-dimensional PdSe2/SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing

A self-driven and broadband photodetector based on PdSe2/SiNWA mixed-dimensional vdW heterojunction is fabricated, which shows a broadband spectrum from 200 nm to 4.6 μm with a high polarization sensitivity and good mid-infrared imaging capability.