Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions

The self-labeling protein tags (SLPs) HaloTag7, SNAP-tag and CLIP-tag allow the covalent label-ing of fusion proteins with synthetic molecules for applications in bioimaging and biotechnology. To guide the selection of an SLP-substrate pair and provide guidelines for the design of sub-strates, we report a systematic and comparative study on the labeling kinetics and substrate specificities of HaloTag7, SNAP-tag and CLIP-tag. HaloTag7 reaches almost diffusion-limited labeling rates with certain rhodamine substrates, which are more than two orders of magnitude higher than those of SNAP-tag for the corresponding substrates. SNAP-tag labeling rates how-ever are less affected by the structure of the label than those of HaloTag7, which vary over six orders of magnitude for commonly employed substrates. Solving the crystal structures of Halo-Tag7 and SNAP-tag labeled with fluorescent substrates allowed us to rationalize their substrate preferences. We also demonstrate how these insights can be exploited to design substrates with improved labeling kinetics.

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Photoluminescence study and structural characterization of p-type ZnO doped by N and/or As acceptors

Semiconductor Science and Technology ◽

10.1088/0268-1242/22/2/002 ◽

2006 ◽

Vol 22 (2) ◽

pp. 10-14 ◽

Cited By ~ 44

Author(s):

E Przeździecka ◽

E Kamińska ◽

K P Korona ◽

E Dynowska ◽

W Dobrowolski ◽

...

Keyword(s):

Structural Characterization ◽

Photoluminescence Study ◽

P Type

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Electrical and structural characterization of shallow As acceptors in natural p-type 2H-MoS2

Applied Physics Letters ◽

10.1063/1.5091081 ◽

2019 ◽

Vol 114 (19) ◽

pp. 192103

Author(s):

J. R. Toledo ◽

R. de Oliveira ◽

P. H. Vaz ◽

F. D. Brandão ◽

G. M. Ribeiro ◽

...

Keyword(s):

Structural Characterization ◽

P Type

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Physicochemical and structural characterization of iron–sucrose formulations: a comparative study

Pharmaceutical Development and Technology ◽

10.3109/10837450.2013.795171 ◽

2013 ◽

Vol 19 (5) ◽

pp. 513-520 ◽

Cited By ~ 14

Author(s):

Bhavesh S. Barot ◽

Punit B. Parejiya ◽

Dharmik M. Mehta ◽

Pragna K. Shelat ◽

Gaurang B. Shah

Keyword(s):

Comparative Study ◽

Structural Characterization ◽

Iron Sucrose

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Characterization of Near-Edge-Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBE

MRS Proceedings ◽

10.1557/proc-449-695 ◽

1996 ◽

Vol 449 ◽

Cited By ~ 11

Author(s):

M. Leroux ◽

B. Beaumont ◽

N. Grandjean ◽

J. Massies ◽

P. Gibart

Keyword(s):

Comparative Study ◽

Activation Energies ◽

Luminescence Spectra ◽

Optical Transitions ◽

Growth Technique ◽

Luminescence Study ◽

Epitaxial Strain ◽

Reflectivity Spectra ◽

P Type

ABSTRACTWe report a comparative study by luminescence and reflectivity of GaN grown on sapphire by MOVPE, HVPE and GSMBE. Whatever the growth technique, undoped GaN shows well resolved reflectivity spectra, allowing hetero-epitaxial strain to be taken into account in the interpretation of luminescence spectra. MOVPE provides the highest purity samples so far. From the luminescence study of n- and p-type doped samples, activation energies of 265 ± 10 meV and 34 ± 2 meV are deduced for Mg acceptors and Si donors respectively. From the luminescence spectra of HVPE grown samples, the presence of a perturbed interfacial n+ layer is evidenced.

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