The Advantages of NTD Silicon for High Power Semiconductor Devices

Neutron Transmutation Doping in Semiconductors ◽

10.1007/978-1-4684-8249-2_5 ◽

1979 ◽

pp. 47-52

Author(s):

Roger W. Phillips

Keyword(s):

High Power ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Room Temperature Bonding of GaN on Diamond Wafers by Using Mo/Au Nano-Layer for High-Power Semiconductor Devices

SSRN Electronic Journal ◽

10.2139/ssrn.3427489 ◽

2019 ◽

Author(s):

Kang Wang ◽

Kun Ruan ◽

Wenbo Hu ◽

Shengli Wu ◽

Hongxing Wang

Keyword(s):

High Power ◽

Room Temperature ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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System-In-Package Approach for Ultra-High-Power Semiconductor Devices

2006 International Conference on Electronic Materials and Packaging ◽

10.1109/emap.2006.4430564 ◽

2006 ◽

Author(s):

Jeffrey Chen

Keyword(s):

High Power ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Low Temperature Bonding Polycrystalline Diamond to Si by Using Au Thin-layer for High-power Semiconductor Devices

10.1109/icept52650.2021.9568004 ◽

2021 ◽

Author(s):

Yi Zhong ◽

Shuchao Bao ◽

Ke Li ◽

Mingchuan Zhang ◽

Daquan Yu

Keyword(s):

Low Temperature ◽

Thin Layer ◽

High Power ◽

Semiconductor Devices ◽

Polycrystalline Diamond ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Low Temperature Bonding

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(Invited) High Power Semiconductor Devices for FACTS: Current State of the Art and Opportunities for Advanced Materials

ECS Transactions ◽

10.1149/1.3631482 ◽

2019 ◽

Vol 41 (8) ◽

pp. 19-30 ◽

Cited By ~ 1

Author(s):

Matthew J. Marinella ◽

Stanley Atcitty ◽

Sandeepan DasGupta ◽

Robert J. Kaplar ◽

Mark A. Smith

Keyword(s):

High Power ◽

State Of The Art ◽

Semiconductor Devices ◽

Advanced Materials ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Current State

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Simulation of the Transient Temperature Distribution in a Cooling Apparatus for High-Power Semiconductor Devices Using Heat Pipes.

TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series B ◽

10.1299/kikaib.62.1172 ◽

1996 ◽

Vol 62 (595) ◽

pp. 1172-1177

Author(s):

Osamu SUZUKI ◽

Kazumasa FUJIOKA ◽

Heikichi KUWAHARA ◽

Toshio TAKASAKI

Keyword(s):

Temperature Distribution ◽

High Power ◽

Semiconductor Devices ◽

Heat Pipes ◽

Transient Temperature ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Transient Temperature Distribution

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Electroactive passivation of high power semiconductor devices with punch through design by hydrogenated amorphous carbon layers (a-C:H)

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) ◽

10.1109/ispsd.1998.702664 ◽

2002 ◽

Cited By ~ 3

Author(s):

R. Barthelmess ◽

M. Beuermann ◽

D. Metzner ◽

G. Schmidt ◽

D. Westerholt ◽

...

Keyword(s):

Amorphous Carbon ◽

High Power ◽

Semiconductor Devices ◽

Hydrogenated Amorphous Carbon ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Hydrogenated Amorphous

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High-power semiconductor devices. Review and comparative assessment

Russian Electrical Engineering ◽

10.3103/s106837120710001x ◽

2007 ◽

Vol 78 (10) ◽

pp. 509-514 ◽

Cited By ~ 3

Author(s):

S. Linder

Keyword(s):

High Power ◽

Semiconductor Devices ◽

Comparative Assessment ◽

Power Semiconductor ◽

Power Semiconductor Devices

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High power semiconductor devices

10.1109/irecon.1965.1147502 ◽

2005 ◽

Cited By ~ 2

Author(s):

F. Gentry ◽

R. York

Keyword(s):

High Power ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Physically based models of high power semiconductor devices for PSpice

Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370) ◽

10.1109/ias.1999.799984 ◽

2003 ◽

Cited By ~ 13

Author(s):

S. Schroder ◽

R.W. De Doncker

Keyword(s):

High Power ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Physically Based ◽

Physically Based Models

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Progress of Power Semiconductor Devices. 3. Recent Progress of High Power Insulated Gate Bipolar Transistor.

The Journal of the Institute of Electrical Engineers of Japan ◽

10.1541/ieejjournal.118.274 ◽

1998 ◽

Vol 118 (5) ◽

pp. 274-277

Author(s):

MUTSUHIRO MORI

Keyword(s):

High Power ◽

Recent Progress ◽

Semiconductor Devices ◽

Bipolar Transistor ◽

Power Semiconductor ◽

Insulated Gate Bipolar Transistor ◽

Power Semiconductor Devices

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