1995 Symposium on VLSI Technology. Digest of Technical Papers
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Published By Japan Soc. Appl. Phys

0780326024
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Characteristics of CMOSFETs with sputter-deposited W/TiN stack gate

2002 ◽  
Author(s):  
D.H. Lee ◽  
S.H. Joo ◽  
G.H. Lee ◽  
J. Moon ◽  
T.E. Shim ◽  
...  
Keyword(s):  
Sputter Deposited

Highly porous interlayer dielectric for interconnect capacitance reduction

2002 ◽  
Author(s):  
S.-P. Jeng ◽  
K. Taylor ◽  
T. Seha ◽  
M.-C. Chang ◽  
J. Fattaruso ◽  
...  
Keyword(s):  
Interlayer Dielectric ◽  
Porous Interlayer ◽  
Highly Porous

Reoxidized nitric oxide (ReoxNO) process and its effect on the dielectric reliability of the LOCOS edge

2002 ◽  
Author(s):  
B. Maiti ◽  
P.J. Tobin ◽  
Y. Okada ◽  
S. Ajuria ◽  
K.G. Reid ◽  
...  
Keyword(s):  
Nitric Oxide

High quality ultra-thin (4 nm) gate oxide by UV/O/sub 3/ surface pre-treatment of native oxide

2002 ◽  
Author(s):  
S. Ohkubo ◽  
Y. Tamura ◽  
R. Sugino ◽  
T. Nakanishi ◽  
Y. Sugita ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Native Oxide ◽  
High Quality ◽  
Pre Treatment

A high performance 16M DRAM on a thin film SOI

2002 ◽  
Author(s):  
Hyoung-Sub Kim ◽  
Sang-Bo Lee ◽  
Dong-Uk Choi ◽  
Jae-Hoon Shim ◽  
Kyu-Han Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance

Impact of the reduction of the gate to drain capacitance on low voltage operated CMOS devices

2002 ◽  
Author(s):  
K. Yamashita ◽  
H. Nakaoka ◽  
K. Kurimoto ◽  
H. Umimoto ◽  
S. Odanaka
Keyword(s):  
Low Voltage
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