2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440)
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A comprehensive experimental study on technology options for reduced substrate coupling in RF and high-speed bipolar circuits

2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) ◽

10.1109/bipol.2003.1274931 ◽

2003 ◽

Cited By ~ 4

Author(s):

Pfost ◽

Brenner ◽

Huttner ◽

Romanyuk

Keyword(s):

Experimental Study ◽

High Speed ◽

Substrate Coupling

Next-generation semiconductors for DC-to-DC converters

2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) ◽

10.1109/bipol.2003.1274927 ◽

2003 ◽

Cited By ~ 2

Author(s):

Darwish

Keyword(s):

Next Generation

Vertical profile optimisation of a self-aligned SiGeC HBT process with an n-cap emitter

2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) ◽

10.1109/bipol.2003.1274947 ◽

2003 ◽

Cited By ~ 7

Author(s):

Donkers ◽

Magnee ◽

Huizing ◽

Agarwal ◽

Aksen ◽

...

Keyword(s):

Vertical Profile

A 24.9-GHz emitter-degenerated SiGe bipolar VCO

2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) ◽

10.1109/bipol.2003.1274938 ◽

2003 ◽

Cited By ~ 8

Author(s):

Zhan ◽

Duster ◽

Kornegay

Vertical SiGe-base bipolar transistors on CMOS-compatible SOI substrate

2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) ◽

10.1109/bipol.2003.1274969 ◽

2003 ◽

Cited By ~ 10

Author(s):

Jin Cai ◽

Kumar ◽

Steigerwalt ◽

Ho ◽

Schonenberg ◽

...

Keyword(s):

Bipolar Transistors ◽

Cmos Compatible

Estimation of f/sub max/ by the common-intercept method

2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) ◽

10.1109/bipol.2003.1274973 ◽

2003 ◽

Author(s):

Huszka ◽

Molnar ◽

Seebacher

Keyword(s):

The Common

A BiCMOS SiGe low phase noise tunable 30 GHz RF source using a frequency tripler and a VCO

2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) ◽

10.1109/bipol.2003.1274934 ◽

2003 ◽

Cited By ~ 1

Author(s):

Coustou ◽

Dubuc ◽

Graffeuil ◽

Tournier ◽

Llopis ◽

...

Keyword(s):

Phase Noise ◽

Low Phase Noise

Impact of collector-base junction traps and high injection barrier effect on 1/f noise

2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) ◽

10.1109/bipol.2003.1274961 ◽

2003 ◽

Cited By ~ 1

Author(s):

Jin Tang ◽

Guofu Niu ◽

Joseph ◽

Harame

Keyword(s):

Barrier Effect ◽

High Injection ◽

Injection Barrier

Cellular radio integration directions

2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) ◽

10.1109/bipol.2003.1274928 ◽

2003 ◽

Cited By ~ 2

Author(s):

Krenik ◽

Jau-Yuann Yang

Keyword(s):

Cellular Radio

SiGe bipolar technology with 3.9 ps gate delay

2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) ◽

10.1109/bipol.2003.1274945 ◽

2003 ◽

Cited By ~ 37

Author(s):

Meister ◽

Schafer ◽

Aufinger ◽

Stengl ◽

Boguth ◽

...

Keyword(s):

Gate Delay ◽

Bipolar Technology

2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A comprehensive experimental study on technology options for reduced substrate coupling in RF and high-speed bipolar circuits

Next-generation semiconductors for DC-to-DC converters

Vertical profile optimisation of a self-aligned SiGeC HBT process with an n-cap emitter

A 24.9-GHz emitter-degenerated SiGe bipolar VCO

Vertical SiGe-base bipolar transistors on CMOS-compatible SOI substrate

Estimation of f/sub max/ by the common-intercept method

A BiCMOS SiGe low phase noise tunable 30 GHz RF source using a frequency tripler and a VCO

Impact of collector-base junction traps and high injection barrier effect on 1/f noise

Cellular radio integration directions

SiGe bipolar technology with 3.9 ps gate delay

2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440)
Latest Publications