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Charging damage in thin gate-oxides-better or worse?
1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100)
◽
10.1109/ppid.1998.725568
◽
2002
◽
Cited By ~ 7
Author(s):
K.P. Cheung
◽
C.-T. Liu
◽
C.-P. Chang
◽
J.I. Colonell
◽
W.-Y.-C. Lai
◽
...
Keyword(s):
Gate Oxides
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High-k gate oxides integration of graphene based infrared detector
JOURNAL OF INFRARED AND MILLIMETER WAVES
◽
10.3724/sp.j.1010.2012.00118
◽
2012
◽
Vol 31
(2)
◽
pp. 118-121
Author(s):
Peng ZHOU
◽
Hong-Qiang WEI
◽
Qing-Qing SUN
◽
Li YE
◽
Lin CHEN
◽
...
Keyword(s):
Infrared Detector
◽
Gate Oxides
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High K
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Logistic model for leakage current in electrical stressed ultra-thin gate oxides
Electronics Letters
◽
10.1049/el:20030485
◽
2003
◽
Vol 39
(9)
◽
pp. 749
◽
Cited By ~ 2
Author(s):
E. Miranda
◽
A. Cester
◽
A. Paccagnella
Keyword(s):
Leakage Current
◽
Logistic Model
◽
Gate Oxides
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Reliability of ultra-thin gate oxides grown in low-pressure N2O ambient or on nitrogen-implanted silicon
Microelectronic Engineering
◽
10.1016/s0167-9317(99)00338-x
◽
1999
◽
Vol 48
(1-4)
◽
pp. 59-62
Author(s):
A.J. Bauer
◽
M. Beichele
◽
M. Herden
◽
H. Ryssel
Keyword(s):
Low Pressure
◽
Gate Oxides
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Simulation of soft and hard breakdown of ultra-thin gate oxides
2008 Canadian Conference on Electrical and Computer Engineering
◽
10.1109/ccece.2008.4564822
◽
2008
◽
Author(s):
Leila Rezaee
◽
C.R. Selvakumar
Keyword(s):
Gate Oxides
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Impact of Organic Contaminants from the Environment on Electrical Characteristics of Thin Gate Oxides
Japanese Journal of Applied Physics
◽
10.1143/jjap.37.2468
◽
1998
◽
Vol 37
(Part 1, No. 5A)
◽
pp. 2468-2471
◽
Cited By ~ 33
Author(s):
Tamotsu Ogata
◽
Cozy Ban
◽
Akemi Ueyama
◽
Seiji Muranaka
◽
Tomohiko Hayashi
◽
...
Keyword(s):
Organic Contaminants
◽
Electrical Characteristics
◽
Gate Oxides
Download Full-text
Defect‐related dielectric breakdown, charge trapping, and interface‐state generation of gate oxides grown on zone‐melting‐recrystallized silicon‐on‐insulator films
Journal of Applied Physics
◽
10.1063/1.343098
◽
1989
◽
Vol 65
(2)
◽
pp. 646-650
◽
Cited By ~ 3
Author(s):
Chun‐Teh Lee
◽
Chenson K. Chen
Keyword(s):
Dielectric Breakdown
◽
Charge Trapping
◽
Interface State
◽
Zone Melting
◽
Silicon On Insulator
◽
Gate Oxides
◽
State Generation
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On the reduction of direct tunneling leakage through ultrathin gate oxides by a one-dimensional Schrödinger–Poisson solver
Journal of Applied Physics
◽
10.1063/1.373477
◽
2000
◽
Vol 87
(11)
◽
pp. 7931-7939
◽
Cited By ~ 49
Author(s):
Eric Cassan
Keyword(s):
Gate Oxides
◽
One Dimensional
◽
Direct Tunneling
◽
Poisson Solver
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Physically based predictive model of oxide charging [MOSFET gate oxides]
1996 International Integrated Reliability Workshop Final Report
◽
10.1109/irws.1996.583398
◽
2002
◽
Cited By ~ 4
Author(s):
J.F. Conley
◽
P.M. Lenahan
◽
B.D. Wallace
Keyword(s):
Predictive Model
◽
Gate Oxides
◽
Physically Based
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Study of direct-tunneling gate oxides for CMOS applications
1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100)
◽
10.1109/ppid.1998.725567
◽
2002
◽
Cited By ~ 1
Author(s):
H.S. Momose
◽
S.-I. Nakamura
◽
Y. Katsumata
◽
H. Iwai
Keyword(s):
Gate Oxides
◽
Direct Tunneling
Download Full-text
Experimental study and modeling of the temperature dependence of soft breakdown conduction in ultrathin gate oxides
2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.
◽
10.1109/relphy.2003.1197815
◽
2003
◽
Cited By ~ 2
Author(s):
A. Avellan
◽
E. Miranda
◽
B. Sell
◽
W. Krautschneider
Keyword(s):
Experimental Study
◽
Temperature Dependence
◽
Gate Oxides
◽
Soft Breakdown
Download Full-text
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