IEEE International Integrated Reliability Workshop Final Report, 2003
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Non-invasive nature of corona charging on thermal Si/SiO/sub 2/ structures

IEEE International Integrated Reliability Workshop Final Report, 2003 ◽

10.1109/irws.2003.1283290 ◽

2004 ◽

Author(s):

M. Dautrich ◽

P.M. Lenahan ◽

A.Y. Kang ◽

J.F. Conley

Keyword(s):

Non Invasive ◽

Corona Charging

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A current mirror method for thermal instability of SOI BJT

IEEE International Integrated Reliability Workshop Final Report, 2003 ◽

10.1109/irws.2003.1283298 ◽

2004 ◽

Cited By ~ 2

Author(s):

J. Kim ◽

Y. Liu ◽

J.A. De Santis

Keyword(s):

Thermal Instability ◽

Current Mirror ◽

A Current

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Physically-based simulation of the early and long-term failures in the copper dual damascene interconnect

IEEE International Integrated Reliability Workshop Final Report, 2003 ◽

10.1109/irws.2003.1283305 ◽

2004 ◽

Cited By ~ 6

Author(s):

V. Sukharev ◽

R. Choudhury ◽

C.W. Park

Keyword(s):

Physically Based Simulation ◽

Dual Damascene ◽

Physically Based

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Leakage current recovery in SRAM after AC stressing

IEEE International Integrated Reliability Workshop Final Report, 2003 ◽

10.1109/irws.2003.1283303 ◽

2004 ◽

Author(s):

C. Payan ◽

S. Kumar ◽

A. Thupil ◽

S. Kasichainula ◽

W.B. Knowlton

Keyword(s):

Leakage Current

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HCI lifetime enhancement by PLDD implant energy optimisation of P-Ch MOSFET in 0.13μm CMOS technology

IEEE International Integrated Reliability Workshop Final Report, 2003 ◽

10.1109/irws.2003.1283315 ◽

2004 ◽

Author(s):

L. Hyeokjae ◽

E. Quek ◽

Y. Andrew ◽

M.F. Karim

Keyword(s):

Cmos Technology ◽

Energy Optimisation ◽

Lifetime Enhancement

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PMOS NBTI-induced circuit mismatch in advanced technologies

IEEE International Integrated Reliability Workshop Final Report, 2003 ◽

10.1109/irws.2003.1283292 ◽

2004 ◽

Cited By ~ 1

Author(s):

M. Agostinelli ◽

S. Lau ◽

S. Pae ◽

P. Marzolf ◽

H. Muthali ◽

...

Keyword(s):

Advanced Technologies

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Gate oxide reliability parameters in the range 1.6 to 10 nm

IEEE International Integrated Reliability Workshop Final Report, 2003 ◽

10.1109/irws.2003.1283291 ◽

2004 ◽

Cited By ~ 4

Author(s):

R.-P. Vollertsen ◽

E.Y. Wu

Keyword(s):

Gate Oxide ◽

Reliability Parameters ◽

Oxide Reliability

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Projecting the reliability of SiGe NPN transistors after AC Vbe reverse stress from DC device lifetime

IEEE International Integrated Reliability Workshop Final Report, 2003 ◽

10.1109/irws.2003.1283297 ◽

2004 ◽

Author(s):

K. Hofman

Keyword(s):

Device Lifetime

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NBTI mechanism explored on the back gate bias for pMOSFETs

IEEE International Integrated Reliability Workshop Final Report, 2003 ◽

10.1109/irws.2003.1283319 ◽

2004 ◽

Cited By ~ 4

Author(s):

M.-G. Chen ◽

J.-S. Li ◽

C. Jiang ◽

C.H. Liu ◽

K.-C. Su ◽

...

Keyword(s):

Gate Bias ◽

Back Gate

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Latch-up failure path between power pins in the mixed-voltage process

IEEE International Integrated Reliability Workshop Final Report, 2003 ◽

10.1109/irws.2003.1283313 ◽

2004 ◽

Author(s):

Chau-Neng Wu ◽

H.-M. Chou ◽

M. Chang

Keyword(s):

Failure Path ◽

Latch Up

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IEEE International Integrated Reliability Workshop Final Report, 2003Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Non-invasive nature of corona charging on thermal Si/SiO/sub 2/ structures

A current mirror method for thermal instability of SOI BJT

Physically-based simulation of the early and long-term failures in the copper dual damascene interconnect

Leakage current recovery in SRAM after AC stressing

HCI lifetime enhancement by PLDD implant energy optimisation of P-Ch MOSFET in 0.13μm CMOS technology

PMOS NBTI-induced circuit mismatch in advanced technologies

Gate oxide reliability parameters in the range 1.6 to 10 nm

Projecting the reliability of SiGe NPN transistors after AC Vbe reverse stress from DC device lifetime

NBTI mechanism explored on the back gate bias for pMOSFETs

Latch-up failure path between power pins in the mixed-voltage process

IEEE International Integrated Reliability Workshop Final Report, 2003
Latest Publications