Extensive analysis of band alignment engineering on the open circuit voltage performance of a GaAs/GaSb hetero structure solar cell

Author(s):  
Girija Shankar Sahoo ◽  
Guru Prasad Mishra
Author(s):  
Xuefeng Xia ◽  
Dan Zhang ◽  
Xiaofeng Wang ◽  
Zonghu Xiao ◽  
Fan Li

In recent years, the nickel oxide (NiOx)-based planar p-i-n perovskite solar cell (PSC) has progressed rapidly. Nevertheless, poor electrical properties of NiOx, unoptimized band alignment between NiOx and perovskites, as...


Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.


Vacuum ◽  
2016 ◽  
Vol 128 ◽  
pp. 91-98 ◽  
Author(s):  
Sheng Ge ◽  
Haitao Xu ◽  
Wenzhen Wang ◽  
Runan Cao ◽  
Yanglin Wu ◽  
...  

2009 ◽  
Vol 48 (24) ◽  
pp. 4402-4405 ◽  
Author(s):  
Elizabeth A. Gibson ◽  
Amanda L. Smeigh ◽  
Loïc Le Pleux ◽  
Jérôme Fortage ◽  
Gerrit Boschloo ◽  
...  

2015 ◽  
Vol 5 (4) ◽  
pp. 682-694 ◽  
Author(s):  
Lu Wang ◽  
Jianshu Han ◽  
Anthony Lochtefeld ◽  
Andrew Gerger ◽  
Allen Barnett

Author(s):  
Rohit D. Chavan ◽  
Nishi Parikh ◽  
Mohammad Mahdi Tavakoli ◽  
Daniel Prochowicz ◽  
Abul Kalam ◽  
...  

2010 ◽  
Vol 132 (2) ◽  
Author(s):  
Yi-Chun Chen ◽  
Chao-Ying Yu ◽  
Chih-Ping Chen ◽  
Shu-Hua Chan ◽  
Ching Ting

A novel soluble conjugated polymers, P2, with coplanar thiophene-phenylene-thiophene unit is designed and synthesized as suitable active material used in tandem cells to compensate the poly(3-hexylthiophene) (P3HT)/[6,6]-phenyl-C71 butyric acid methyl ester (PC71BM) bulk-heterojunction cell in this paper. P2 polymer bears advantages in both low optical bandgap (1.7 eV) and high hole mobility properties (3.4×10−3 cm2/V-s from field-effect transistor measurement). Furthermore, the electrochemical studies of P2 indicate desirable highest occupied molecular orbital/lowest unoccupied molecular orbital (HOMO/LUMO) band structure that enables a high open circuit voltage when pairing with PCBM acceptor. The best power conversion efficiency of this polymer solar cell thus far based on P2/PC71BM system with a weight ratio of 1:3 reached 4.4% with a short circuit current density (Jsc) of 10.2 mA/cm2, an open circuit voltage (Voc) of 0.81 V, and a fill factor (FF) of 0.53 under air mass (AM) 1.5 G (100 mW/cm2). The preliminary data of the tandem cell with indium tin oxide (ITO) glass/PEDOT:PSS/P2:PC71BM/TiOx/PEDOT:PSS/P3HT:PC71BM/TiOx/Al configuration has reached Jsc of 6.2 mA/cm2, Voc of 1.33 V, FF of 0.56 and an overall efficiency of 4.6% under AM 1.5 G (100 mW/cm2).


Author(s):  
H. Bitam ◽  
B. Hadjoudja ◽  
Beddiaf Zaidi ◽  
C. Shakher ◽  
S. Gagui ◽  
...  

Due to increased energy intensive human activities resulting accelerated demand for electric power coupled with occurrence of natural disasters with increased frequency, intensity, and duration, it becomes essential to explore and advance renewable energy technology for sustainability of the society. Addressing the stated problem and providing a radical solution has been attempted in this study. To harvest the renewable energy, among variety of solar cells reported, a composite a-Si/CZTS photovoltaic devices has not yet been investigated. The calculated parameters for solar cell based on the new array of layers consisting of a-Si/CZTS are reported in this study. The variation of i) solar cell efficiency as a function of CZTS layer thickness, temperature, acceptor, and donor defect concentration; ii) variation of the open circuit current density as a function of temperature, open circuit voltage; iii) variation of open circuit voltage as a function of the thickness of the CZTS layer has been determined. There has been no reported study on a-Si/CZTS configuration-based solar cell, analysis of the parameters, and study to address the challenges imped efficiency of the photovoltaic device and the same has been discussed in this work. The value of the SnO2/a-Si/CZTS solar cells obtained from the simulation is 23.9 %.


Sign in / Sign up

Export Citation Format

Share Document