ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153)

Limitations of the two-frequency capacitance measurement technique applied to ultra-thin SiO/sub 2/ gate oxides

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) ◽

10.1109/icmts.2001.928637 ◽

2002 ◽

Cited By ~ 1

Author(s):

A. Nara ◽

N. Yasuda ◽

H. Satake ◽

A. Toriumi

Keyword(s):

Measurement Technique ◽

Capacitance Measurement ◽

Gate Oxides

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Statistical modeling techniques: FPV vs. BPV

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) ◽

10.1109/icmts.2001.928640 ◽

2002 ◽

Cited By ~ 2

Author(s):

N. Telang ◽

J.M. Higman

Keyword(s):

Statistical Modeling ◽

Modeling Techniques

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A new approach to characterize substrate losses of on-chip inductors

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) ◽

10.1109/icmts.2001.928648 ◽

2002 ◽

Cited By ~ 9

Author(s):

L. Schimpf ◽

B. Benna ◽

D. Proetel

Keyword(s):

New Approach ◽

On Chip

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Oxide thickness dependence of nitridation effects on TDDB characteristics

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) ◽

10.1109/icmts.2001.928646 ◽

2002 ◽

Author(s):

M.K. Mazumder ◽

A. Teramoto ◽

J. Komori ◽

Y. Mashiko

Keyword(s):

Oxide Thickness ◽

Thickness Dependence

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Effective-channel-length extraction for double-diffused MOSFETs

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) ◽

10.1109/icmts.2001.928644 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Ichikawa ◽

Y. Eshima ◽

K. Terada ◽

T. Matsuki

Keyword(s):

Channel Length ◽

Effective Channel

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A new robust on-wafer 1/f noise measurement and characterization system

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) ◽

10.1109/icmts.2001.928650 ◽

2002 ◽

Cited By ~ 15

Author(s):

A. Blaum ◽

O. Pilloud ◽

G. Scalea ◽

J. Victory ◽

F. Sischka

Keyword(s):

Noise Measurement

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An improved transmission line pulsing (TLP) setup for electrostatic discharge (ESD) testing in semiconductor devices and ICs

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) ◽

10.1109/icmts.2001.928668 ◽

2002 ◽

Cited By ~ 1

Author(s):

J.C. Lee ◽

R. Young ◽

J.J. Liou ◽

G.D. Croft ◽

J.C. Bernier

Keyword(s):

Transmission Line ◽

Electrostatic Discharge ◽

Semiconductor Devices

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New length scaling of current gain factor and characterization method for pocket implanted MOSFET's

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) ◽

10.1109/icmts.2001.928673 ◽

2002 ◽

Author(s):

M. Minondo ◽

G. Gouget ◽

A. Juge

Keyword(s):

Gain Factor ◽

Current Gain ◽

Length Scaling

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Effect of substrate voltage and oxide thickness on NMOSFET matching characteristics for a 0.18 μm CMOS technology

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) ◽

10.1109/icmts.2001.928628 ◽

2002 ◽

Author(s):

R. Difrenza ◽

P. Llinares ◽

E. Granger ◽

H. Brut ◽

G. Ghibaudo

Keyword(s):

Oxide Thickness ◽

Cmos Technology

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Test structure and method for capacitance extraction in multi-conductor systems

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) ◽

10.1109/icmts.2001.928660 ◽

2002 ◽

Cited By ~ 1

Author(s):

B. Ward ◽

J. Bordelon ◽

S. Prior ◽

B. Tranchina ◽

Jiann Liu

Keyword(s):

Test Structure ◽

Capacitance Extraction

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ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Limitations of the two-frequency capacitance measurement technique applied to ultra-thin SiO/sub 2/ gate oxides

Statistical modeling techniques: FPV vs. BPV

A new approach to characterize substrate losses of on-chip inductors

Oxide thickness dependence of nitridation effects on TDDB characteristics

Effective-channel-length extraction for double-diffused MOSFETs

A new robust on-wafer 1/f noise measurement and characterization system

An improved transmission line pulsing (TLP) setup for electrostatic discharge (ESD) testing in semiconductor devices and ICs

New length scaling of current gain factor and characterization method for pocket implanted MOSFET's

Effect of substrate voltage and oxide thickness on NMOSFET matching characteristics for a 0.18 μm CMOS technology

Test structure and method for capacitance extraction in multi-conductor systems

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ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Limitations of the two-frequency capacitance measurement technique applied to ultra-thin SiO/sub 2/ gate oxides

Statistical modeling techniques: FPV vs. BPV

A new approach to characterize substrate losses of on-chip inductors

Oxide thickness dependence of nitridation effects on TDDB characteristics

Effective-channel-length extraction for double-diffused MOSFETs

A new robust on-wafer 1/f noise measurement and characterization system

An improved transmission line pulsing (TLP) setup for electrostatic discharge (ESD) testing in semiconductor devices and ICs

New length scaling of current gain factor and characterization method for pocket implanted MOSFET's

Effect of substrate voltage and oxide thickness on NMOSFET matching characteristics for a 0.18 μm CMOS technology

Test structure and method for capacitance extraction in multi-conductor systems

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153)
Latest Publications