Limitations of the two-frequency capacitance measurement technique applied to ultra-thin SiO/sub 2/ gate oxides

2002 ◽  
Author(s):  
A. Nara ◽  
N. Yasuda ◽  
H. Satake ◽  
A. Toriumi
Keyword(s):  
Measurement Technique ◽  
Capacitance Measurement ◽  
Gate Oxides

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

2020 ◽  
Vol 1004 ◽  
pp. 635-641
Author(s):  
Peyush Pande ◽  
Sima Dimitrijev ◽  
Daniel Haasmann ◽  
Hamid Amini Moghadam ◽  
Philip Tanner ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Comparative Analysis ◽  
Direct Measurement ◽  
Measurement Technique ◽  
Measurement Method ◽  
Gate Oxide ◽  
Interface Traps ◽  
Gate Oxides ◽  
Mos Capacitors ◽  
Direct Measurement Method

This paper presents a comparative analysis of the electrically active near-interface traps, energetically located above the bottom of conduction band. Two different samples of N-type SiC MOS capacitors were fabricated with gate oxides grown in (1) dry O2 (as-grown) and (2) dry O2 annealed in nitric oxide (nitride). Measurements performed by the direct measurement method revealed that the traps located further away from the SiO2/SiC interface are removed by nitridation. A spatially localized behaviour of NITs is observed only in the nitrided gate oxide but not in the as-grown gate oxide.

A Guideline for Accurate Two-Frequency Capacitance Measurement for Ultra-Thin Gate Oxides

2000 ◽  
Author(s):  
Akiko Nara ◽  
Naoki Yasuda ◽  
Hideki Satake ◽  
Akira Toriumi
Keyword(s):  
Capacitance Measurement ◽  
Gate Oxides
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