Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat No 04EX850) ESSDER-04
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131

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Integrated circuits for the biology-to-silicon interface

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat No 04EX850) ESSDER-04 ◽

10.1109/essder.2004.1356477 ◽

2004 ◽

Cited By ~ 3

Author(s):

R. Thewes ◽

C. Paulus ◽

M. Schienle ◽

F. Hofmann ◽

A. Frey ◽

...

Keyword(s):

Integrated Circuits ◽

Silicon Interface

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Technology considerations for automotive

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat No 04EX850) ESSDER-04 ◽

10.1109/essder.2004.1356480 ◽

2004 ◽

Cited By ~ 5

Author(s):

H. Casier ◽

P. Moens ◽

K. Appeltans

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Low voltage and low power aspects of data converter design

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat No 04EX850) ESSDER-04 ◽

10.1109/essder.2004.1356478 ◽

2004 ◽

Author(s):

Qiuting Huang

Keyword(s):

Low Power ◽

Low Voltage ◽

Data Converter ◽

Converter Design

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Electrical characterization and modelling of high-performance SON DG MOSFETs

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat No 04EX850) ESSDER-04 ◽

10.1109/essder.2004.1356567 ◽

2004 ◽

Cited By ~ 5

Author(s):

S. Harrison ◽

D. Munteanu ◽

U. Autran ◽

A. Cros ◽

R. Cerutti ◽

...

Keyword(s):

High Performance ◽

Electrical Characterization

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Thermal scaling of ultra-thin SOI: reduced resistance at low temperature RTA

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat No 04EX850) ESSDER-04 ◽

10.1109/essder.2004.1356512 ◽

2004 ◽

Cited By ~ 1

Author(s):

Jong-Heon Yang ◽

Jihun Oh ◽

Kiju Im ◽

In-Bok Baek ◽

Chang-Geun Ahn ◽

...

Keyword(s):

Low Temperature

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Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO/sub 2/ [CMOS device applications]

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat No 04EX850) ESSDER-04 ◽

10.1109/essder.2004.1356494 ◽

2004 ◽

Author(s):

J.C. Hooker ◽

N. Perez ◽

P. Alen ◽

M. Ritala ◽

M. Leskela ◽

...

Keyword(s):

Work Function ◽

Gate Electrodes ◽

Device Applications

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Investigations on possible occurrence of ballistic transport in different NMOS architectures

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat No 04EX850) ESSDER-04 ◽

10.1109/essder.2004.1356533 ◽

2004 ◽

Cited By ~ 1

Author(s):

R. Clerc ◽

M. Ferrier ◽

F. Dauge ◽

G. Ghibaudo ◽

F. Boeuf ◽

...

Keyword(s):

Ballistic Transport

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Low voltage (1.2V) and high performance mobile DRAM device technology with dual poly-silicon gate using plasma nitrided gate oxide

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat No 04EX850) ESSDER-04 ◽

10.1109/essder.2004.1356586 ◽

2004 ◽

Author(s):

S.H. Hong ◽

B.Y. Koo ◽

T.S. Jeon ◽

S.J. Hyun ◽

Y.G. Shin ◽

...

Keyword(s):

High Performance ◽

Low Voltage ◽

Gate Oxide ◽

Poly Silicon ◽

Device Technology

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Electrical analysis on the drain current of the ultra shallow junction by laser annealing

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat No 04EX850) ESSDER-04 ◽

10.1109/essder.2004.1356509 ◽

2004 ◽

Author(s):

Soo Jin Hong ◽

Young Pil Kim ◽

Jin Hwa Heo ◽

Gook-Hyun Yon ◽

Gung Ho Buh ◽

...

Keyword(s):

Laser Annealing ◽

Drain Current ◽

Shallow Junction ◽

Electrical Analysis

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Integration of photonic functions in and with silicon

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat No 04EX850) ESSDER-04 ◽

10.1109/essder.2004.1356486 ◽

2004 ◽

Author(s):

R. Baets ◽

W. Bogaerts ◽

P. Dumon ◽

G. Roelkens ◽

I. Christiaens ◽

...

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Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat No 04EX850) ESSDER-04Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Integrated circuits for the biology-to-silicon interface

Technology considerations for automotive

Low voltage and low power aspects of data converter design

Electrical characterization and modelling of high-performance SON DG MOSFETs

Thermal scaling of ultra-thin SOI: reduced resistance at low temperature RTA

Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO/sub 2/ [CMOS device applications]

Investigations on possible occurrence of ballistic transport in different NMOS architectures

Low voltage (1.2V) and high performance mobile DRAM device technology with dual poly-silicon gate using plasma nitrided gate oxide

Electrical analysis on the drain current of the ultra shallow junction by laser annealing

Integration of photonic functions in and with silicon

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat No 04EX850) ESSDER-04
Latest Publications