8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings
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0780331060

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Self-enclosed vs. LOPOS-terminated lateral planar p/sup +/n and n/sup +/p junctions in 3C-SiC/Si

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings ◽

10.1109/ispsd.1996.509461 ◽

2002 ◽

Author(s):

R. Tyagi ◽

T.P. Chow

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Rapid thermal modeling for smart-power and integrated multichip power circuit design

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings ◽

10.1109/ispsd.1996.509474 ◽

2002 ◽

Cited By ~ 2

Author(s):

P. Dupuy ◽

J.-M. Dorkel ◽

P. Tounsi ◽

L. Borucki

Keyword(s):

Circuit Design ◽

Thermal Modeling ◽

Smart Power ◽

Power Circuit

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A 30-V P-channel trench gated DMOSFET with 900 μΩ-cm/sup 2/ specific on-resistance at 2.7 V

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings ◽

10.1109/ispsd.1996.509447 ◽

2002 ◽

Cited By ~ 1

Author(s):

R.K. Williams ◽

W. Grabowski ◽

M. Darwish ◽

H. Yilmaz ◽

M. Chang ◽

...

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Diffused spiral junction termination structure: modeling and realization

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings ◽

10.1109/ispsd.1996.509492 ◽

2002 ◽

Cited By ~ 3

Author(s):

D. Krizaj ◽

S. Amon ◽

G. Charitat

Keyword(s):

Structure Modeling

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Current sensing IGBT for future intelligent power module

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings ◽

10.1109/ispsd.1996.509503 ◽

2002 ◽

Cited By ~ 8

Author(s):

M. Kudoh ◽

Y. Hoshi ◽

S. Momota ◽

T. Fujihira ◽

K. Sakurai

Keyword(s):

Power Module ◽

Current Sensing ◽

Intelligent Power Module

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Two-dimensional analysis of surge response in thyristor lightning surge protection devices

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings ◽

10.1109/ispsd.1996.509496 ◽

2002 ◽

Cited By ~ 1

Author(s):

H. Satoh ◽

Y. Shimoda

Keyword(s):

Dimensional Analysis ◽

Two Dimensional ◽

Protection Devices ◽

Surge Protection

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Hot-electron-induced degradation in high-voltage submicron DMOS transistors

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings ◽

10.1109/ispsd.1996.509450 ◽

2002 ◽

Cited By ~ 25

Author(s):

S. Manzini ◽

C. Contiero

Keyword(s):

High Voltage ◽

Hot Electron

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Power ICs in motor control

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings ◽

10.1109/ispsd.1996.509444 ◽

2002 ◽

Cited By ~ 3

Author(s):

B. Murari ◽

D. Rossi

Keyword(s):

Motor Control

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LDMOS implementation by large tilt implant in 0.6 μm BCD5 process, flash memory compatible

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings ◽

10.1109/ispsd.1996.509452 ◽

2002 ◽

Cited By ~ 2

Author(s):

C. Contiero ◽

P. Galbiati ◽

M. Palmieri ◽

L. Vecchi

Keyword(s):

Flash Memory

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A new low temperature diffusion bonding technology between large-area, high-power devices and internal Mo electrodes using Au-Al films

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings ◽

10.1109/ispsd.1996.509506 ◽

2002 ◽

Cited By ~ 2

Author(s):

J. Onuki ◽

M. Satou ◽

S. Murakami ◽

T. Morita ◽

T. Yatsuo

Keyword(s):

Low Temperature ◽

High Power ◽

Diffusion Bonding ◽

Power Devices ◽

Large Area ◽

Temperature Diffusion ◽

Bonding Technology

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8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. ProceedingsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Self-enclosed vs. LOPOS-terminated lateral planar p/sup +/n and n/sup +/p junctions in 3C-SiC/Si

Rapid thermal modeling for smart-power and integrated multichip power circuit design

A 30-V P-channel trench gated DMOSFET with 900 μΩ-cm/sup 2/ specific on-resistance at 2.7 V

Diffused spiral junction termination structure: modeling and realization

Current sensing IGBT for future intelligent power module

Two-dimensional analysis of surge response in thyristor lightning surge protection devices

Hot-electron-induced degradation in high-voltage submicron DMOS transistors

Power ICs in motor control

LDMOS implementation by large tilt implant in 0.6 μm BCD5 process, flash memory compatible

A new low temperature diffusion bonding technology between large-area, high-power devices and internal Mo electrodes using Au-Al films

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings
Latest Publications