1995 IEEE International SOI Conference Proceedings
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89

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6

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Published By IEEE

0780325478

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Tantalum-gate SOI MOSFET's featuring excellent threshold voltage control in low-power applications

1995 IEEE International SOI Conference Proceedings ◽

10.1109/soi.1995.526478 ◽

2002 ◽

Author(s):

H. Shimada ◽

T. Ushiki ◽

Y. Hirano ◽

T. Ohmi

Keyword(s):

Low Power ◽

Threshold Voltage ◽

Voltage Control

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Simulation of the effects of manufacturing process variations on the characteristics of SOI MOSFETs

1995 IEEE International SOI Conference Proceedings ◽

10.1109/soi.1995.526442 ◽

2002 ◽

Author(s):

T.J. Sanders ◽

M.J. Phelps

Keyword(s):

Manufacturing Process ◽

Process Variations

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Minority carrier lifetime results for SOI wafers

1995 IEEE International SOI Conference Proceedings ◽

10.1109/soi.1995.526467 ◽

2002 ◽

Author(s):

J.L. Freeouf ◽

S.T. Liu

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime

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Optical characterization of silicon-on-insulator

1995 IEEE International SOI Conference Proceedings ◽

10.1109/soi.1995.526483 ◽

2002 ◽

Author(s):

G.G. Li ◽

A.R. Forouhi ◽

A. Auberton-Herve ◽

A. Wittkower

Keyword(s):

Optical Characterization ◽

Silicon On Insulator

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SOI CMOS front-end technology: options and tradeoffs

1995 IEEE International SOI Conference Proceedings ◽

10.1109/soi.1995.526431 ◽

2002 ◽

Author(s):

D.A. Antoniadis

Keyword(s):

Front End ◽

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Highly uniform SOI fabrication by applying voltage during KOH etching of bonded wafers

1995 IEEE International SOI Conference Proceedings ◽

10.1109/soi.1995.526459 ◽

2002 ◽

Author(s):

A. Ogura

Keyword(s):

Highly Uniform ◽

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Final polish for SOI wafers-surface roughness and TTV degradation

1995 IEEE International SOI Conference Proceedings ◽

10.1109/soi.1995.526515 ◽

2002 ◽

Author(s):

G. Pfeiffer ◽

S. Fetheroff ◽

S.S. Iyer

Keyword(s):

Surface Roughness

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Paramagnetic defects in SIMOX with supplemental implantation of oxygen

1995 IEEE International SOI Conference Proceedings ◽

10.1109/soi.1995.526509 ◽

2002 ◽

Author(s):

K. Vanheusden ◽

A. Stesmans

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Materials, device and gate oxide integrity evaluation of SIMOX and bonded SOI wafers

1995 IEEE International SOI Conference Proceedings ◽

10.1109/soi.1995.526501 ◽

2002 ◽

Author(s):

S.R. Wilson ◽

T. Wetteroth ◽

S. Hong ◽

H. Shin ◽

B.-Y. Hwang ◽

...

Keyword(s):

Gate Oxide Integrity

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Gettering layer formation in low-dose SIMOX wafers

1995 IEEE International SOI Conference Proceedings ◽

10.1109/soi.1995.526447 ◽

2002 ◽

Author(s):

J. Jablonski ◽

M. Saito ◽

M. Imai ◽

S. Nakashima

Keyword(s):

Low Dose ◽

Layer Formation

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