Highly uniform SOI fabrication by applying voltage during KOH etching of bonded wafers

In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of μ0.96/μm2 within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of 3± 0.08 GHz, the second-order correlation factor g2(τ)=0.0322 ±0.0023, and an exciton life time of 323 ps under two-photon resonant excitation.

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Highly Uniform All‐Vacuum‐Deposited Inorganic Perovskite Artificial Synapses for Reservoir Computing

Advanced Intelligent Systems ◽

10.1002/aisy.202170010 ◽

2021 ◽

Vol 3 (1) ◽

pp. 2170010

Author(s):

Li-Wei Chen ◽

Wei-Chun Wang ◽

Shao-Han Ko ◽

Chien-Yu Chen ◽

Chih-Ting Hsu ◽

...

Keyword(s):

Reservoir Computing ◽

Inorganic Perovskite ◽

Highly Uniform

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Formation of highly uniform tin oxide nanochannels by electrochemical anodization on cold sprayed tin coatings

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2021.126978 ◽

2021 ◽

Vol 410 ◽

pp. 126978

Author(s):

Mehdi Zarei ◽

Salman Nourouzi ◽

Roohollah Jamaati ◽

Irene Garcia Cano ◽

Sergi Dosta ◽

...

Keyword(s):

Tin Oxide ◽

Electrochemical Anodization ◽

Tin Coatings ◽

Highly Uniform

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The Effect of Doping Concentration and Conductivity Type on Preferential Etching of 4H-SiC by Molten KOH

MRS Proceedings ◽

10.1557/proc-815-j5.20 ◽

2004 ◽

Vol 815 ◽

Cited By ~ 7

Author(s):

Ying Gao ◽

Zehong Zhang ◽

Robert Bondokov ◽

Stanislav Soloviev ◽

Tangali Sudarshan

Keyword(s):

Thermal Diffusion ◽

Basal Plane ◽

Doping Concentration ◽

Structural Defects ◽

Etch Pits ◽

Conductivity Type ◽

Isotropic Etching ◽

Electrochemical Processes ◽

P Type ◽

Koh Etching

AbstractMolten KOH etchings were implemented to delineate structural defects in the n- and ptype 4H-SiC samples with different doping concentrations. It was observed that the etch preference is significantly influenced by both the doping concentrations and the conductivity types. The p-type Si-face 4H-SiC substrate has the most preferential etching property, while it is least for n+ samples. It has been clearly demonstrated that the molten KOH etching process involves both chemical and electrochemical processes, during which isotropic etching and preferential etching are competitive. The n+ 4H-SiC substrate was overcompensated via thermal diffusion of boron to p-type and followed by molten KOH etching. Three kinds of etch pits corresponding to threading screw, threading edge, and basal plane dislocations are distinguishably revealed. The same approach was also successfully employed in delineating structural defects in (0001) C-face SiC wafers.

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