Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212)
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103

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Published By Inst. Electr. Eng. Japan

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600 V-GTBT with high current gains

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) ◽

10.1109/ispsd.1998.702662 ◽

2002 ◽

Author(s):

Y. Murakami ◽

T. Hayashi ◽

Y. Nakajima ◽

Y. Shimoida ◽

T. Shinohara

Keyword(s):

High Current

1200 V-trench-IGBT study with square short circuit SOA

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) ◽

10.1109/ispsd.1998.702738 ◽

2002 ◽

Cited By ~ 21

Author(s):

T. Laska ◽

F. Pfirsch ◽

F. Hirler ◽

J. Niedermeyr ◽

C. Schaffer ◽

...

Keyword(s):

Short Circuit

Large SOA insulated gate controlled thyristor (IGCT) with p-base clamp

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) ◽

10.1109/ispsd.1998.702658 ◽

2002 ◽

Cited By ~ 2

Author(s):

J. Sakano ◽

H. Kobayashi ◽

M. Mori

Temperature dependent behaviour of silicon power semiconductors-a new physical model validated by device-internal probing between 400 K and 100 K

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) ◽

10.1109/ispsd.1998.702723 ◽

2002 ◽

Author(s):

A.E. Schlogl ◽

T.T. Mnatsakanov ◽

D. Schroder

Keyword(s):

Physical Model ◽

Temperature Dependent ◽

Power Semiconductors ◽

Dependent Behaviour

A 20-V p-channel with 650 μΩ-cm/sup 2/ at V/sub GS/=2.7 V: Overcoming FPI breakdown in high-channel-conductance low-V/sub t/ trenchFETs

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) ◽

10.1109/ispsd.1998.702733 ◽

2002 ◽

Author(s):

R.K. Williams ◽

W. Grabowski ◽

J. Berwick ◽

M. Darwish ◽

M. Chang

Keyword(s):

Channel Conductance

A novel trench formation and planarization technique using positive etching and CMP for smart power ICs

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) ◽

10.1109/ispsd.1998.702718 ◽

2002 ◽

Cited By ~ 4

Author(s):

S.-G. Kim ◽

J. Kim ◽

J.-W. Lee ◽

J.-G. Koo ◽

K.-S. Nam

Keyword(s):

Smart Power

Effect of trench-sidewall smoothing on on-state voltage of injection enhancement gate transistor

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) ◽

10.1109/ispsd.1998.702686 ◽

2002 ◽

Cited By ~ 1

Author(s):

A. Yahata ◽

S. Urano ◽

T. Inoue ◽

T. Shinohe

Hot-electron injection and trapping in the gate oxide of submicron DMOS transistors

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) ◽

10.1109/ispsd.1998.702734 ◽

2002 ◽

Cited By ~ 10

Author(s):

S. Manzini ◽

A. Gallerano ◽

C. Contiero

Keyword(s):

Gate Oxide ◽

Electron Injection ◽

Hot Electron ◽

Hot Electron Injection

A base resistance controlled thyristor with the self-align corrugated p-base

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) ◽

10.1109/ispsd.1998.702670 ◽

2002 ◽

Cited By ~ 2

Author(s):

D.-S. Byeon ◽

B.-H. Lee ◽

M.-K. Han ◽

Y.-I. Choi

Keyword(s):

The Self ◽

Base Resistance

Analysis of power losses in MOSFET synchronous rectifiers by using their design parameters

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) ◽

10.1109/ispsd.1998.702710 ◽

2002 ◽

Cited By ~ 6

Author(s):

S. Shinohara

Keyword(s):

Design Parameters ◽

Power Losses

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Inst. Electr. Eng. Japan

600 V-GTBT with high current gains

1200 V-trench-IGBT study with square short circuit SOA

Large SOA insulated gate controlled thyristor (IGCT) with p-base clamp

Temperature dependent behaviour of silicon power semiconductors-a new physical model validated by device-internal probing between 400 K and 100 K

A 20-V p-channel with 650 μΩ-cm/sup 2/ at V/sub GS/=2.7 V: Overcoming FPI breakdown in high-channel-conductance low-V/sub t/ trenchFETs

A novel trench formation and planarization technique using positive etching and CMP for smart power ICs

Effect of trench-sidewall smoothing on on-state voltage of injection enhancement gate transistor

Hot-electron injection and trapping in the gate oxide of submicron DMOS transistors

A base resistance controlled thyristor with the self-align corrugated p-base

Analysis of power losses in MOSFET synchronous rectifiers by using their design parameters

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212)
Latest Publications