AlGaInN laser diodes grown on an ELO-GaN substrate vs. on a sapphire substrate

Author(s):  
T. Asano ◽  
T. Tojyo ◽  
K. Yanashima ◽  
M. Takeya ◽  
T. Hino ◽  
...  
2007 ◽  
Vol 46 (9A) ◽  
pp. 5782-5784 ◽  
Author(s):  
Harumasa Yoshida ◽  
Yasufumi Takagi ◽  
Masakazu Kuwabara ◽  
Hiroshi Amano ◽  
Hirofumi Kan

1999 ◽  
Vol 14 (7) ◽  
pp. 2716-2731 ◽  
Author(s):  
Shuji Nakamura

Epitaxially laterally overgrown GaN on sapphire was used to reduce the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. The GaN layer above the SiO2 mask area surrounding the window and corresponding to the lateral overgrowth was nearly free of threading dislocations. A high density of threading dislocations was observed in the vicinity of GaN grown in the window regions. InGaN multiquantum well-structure laser diodes (LDs) grown on pure GaN substrates, which were fabricated by removing the sapphire substrate, were demonstrated. The LDs with an output power of 5 mW exhibited a lifetime of more than 290 h and an estimated lifetime of 10,000 h despite a relatively large threshold current density. The far-field pattern of the LDs with a cleaved mirror facet revealed single-mode emission without any interference effects.


ACS Photonics ◽  
2020 ◽  
Vol 7 (7) ◽  
pp. 1662-1666 ◽  
Author(s):  
Haojun Zhang ◽  
Hongjian Li ◽  
Panpan Li ◽  
Jie Song ◽  
James S. Speck ◽  
...  

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