Proceedings International Conference on Microelectronic Test Structures
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59

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8

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Published By IEEE

0780320654

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A new technique for measuring threshold voltage distribution in flash EEPROM devices

Proceedings International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1995.513988 ◽

2002 ◽

Author(s):

T. Himeno ◽

N. Matsukawa ◽

H. Hazama ◽

K. Sakui ◽

M. Oshikiri ◽

...

Keyword(s):

Threshold Voltage ◽

New Technique ◽

Voltage Distribution ◽

Threshold Voltage Distribution ◽

A New Technique

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Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors

Proceedings International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1995.513958 ◽

2002 ◽

Author(s):

M. Tanabe ◽

H. Shimamoto ◽

T. Onai ◽

K. Washio

Keyword(s):

Bipolar Transistors ◽

Test Structure ◽

Distribution Model ◽

Base Resistance ◽

Resistance Components ◽

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A combined CBR-MOS gate structure for mobility and channel width extraction

Proceedings International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1995.513987 ◽

2002 ◽

Author(s):

J. Santander ◽

M. Lozano ◽

C. Cane ◽

E. Lora-Tamayo

Keyword(s):

Channel Width ◽

Gate Structure ◽

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Accurate capacitor matching measurements using floating gate test structures

Proceedings International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1995.513960 ◽

2002 ◽

Author(s):

H.P. Tuinhout ◽

H. Elzinga ◽

J.T. Brugman ◽

F. Postma

Keyword(s):

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Modified transmission line pulse system and transistor test structures for the study of ESD

Proceedings International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1995.513959 ◽

2002 ◽

Author(s):

R.A. Ashton

Keyword(s):

Transmission Line ◽

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An electrical test structure to evaluate linewidth variations due to proximity effects in optical lithography

Proceedings International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1995.513941 ◽

2002 ◽

Author(s):

M. Fallon ◽

J.T.M. Stevenson ◽

A. Walton ◽

A.M. Gundlach

Keyword(s):

Optical Lithography ◽

Test Structure ◽

Proximity Effects ◽

Electrical Test

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Direct determination of base transit time for heterojunction bipolar transistors without cutoff frequency measurement

Proceedings International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1995.513957 ◽

2002 ◽

Author(s):

Seonghearn Lee

Keyword(s):

Transit Time ◽

Heterojunction Bipolar Transistors ◽

Cutoff Frequency ◽

Direct Determination ◽

Frequency Measurement ◽

Bipolar Transistors

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Stress induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics

Proceedings International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1995.513953 ◽

2002 ◽

Author(s):

S. Satoh ◽

G.J. Hemink ◽

F. Hatakeyama ◽

S. Aritome

Keyword(s):

Leakage Current ◽

Flash Memory ◽

Stress Induced Leakage Current

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Leak current characterization in high frequency operation of CMOS circuits fabricated on SOI substrate

Proceedings International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1995.513947 ◽

2002 ◽

Author(s):

H. Ito ◽

K. Asada

Keyword(s):

High Frequency ◽

Cmos Circuits ◽

Leak Current ◽

High Frequency Operation

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Proceedings International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1995.513971 ◽

2002 ◽

Author(s):

A. Pergoot ◽

B. Graindourze ◽

E. Janssens ◽

J. Bastos ◽

M. Steyaert ◽

...

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