2009 IEEE International Reliability Physics Symposium
Latest Publications

TOTAL DOCUMENTS

206

(FIVE YEARS 0)

H-INDEX

19

(FIVE YEARS 0)

Published By IEEE

9781424428885

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Advanced process & product reliability development in fabless environment

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173256 ◽

2009 ◽

Author(s):

Gautam Verma ◽

Kenneth Wu ◽

Bruce Euzent ◽

Cheng Huang

Keyword(s):

Product Reliability

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The correlation between trap states and mechanical reliability of amorphous Si:H TFTs for flexible electronics

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173388 ◽

2009 ◽

Author(s):

M. H. Lee ◽

S. T. Chang ◽

S.-C. Weng ◽

W.-H. Liu ◽

K.-J. Chen ◽

...

Keyword(s):

Flexible Electronics ◽

Trap States ◽

Mechanical Reliability

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Qualification & reliability monitoring for small quantity ASIC populations

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173257 ◽

2009 ◽

Author(s):

David R. Alexander ◽

Stephen Philpy ◽

Donald Pierce

Keyword(s):

Reliability Monitoring

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Effect of chemical mechanical polishing scratch on TDDB reliability and its reduction in 45nm BEOL process

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173319 ◽

2009 ◽

Author(s):

W. Liu ◽

Y.K. Lim ◽

F. Zhang ◽

W.Y. Zhang ◽

C.Q. Chen ◽

...

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing

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A study bipolar phototransistor action existing in CMOS process triggered by a laser beam used in a C-AFM system

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173353 ◽

2009 ◽

Author(s):

Hung-Sung Lin ◽

Mong-Sheng Wu ◽

Tsui-Hua Huang

Keyword(s):

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Frequency and recovery effects in high-κ BTI degradation

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173404 ◽

2009 ◽

Author(s):

Stephen Ramey ◽

Chetan Prasad ◽

Marty Agostinelli ◽

Sangwoo Pae ◽

Steven Walstra ◽

...

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Statistical and scaling behavior of structural relaxation effects in phase-change memory (PCM) devices

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173236 ◽

2009 ◽

Author(s):

Mattia Boniardi ◽

Daniele Ielmini ◽

Simone Lavizzari ◽

Andrea L. Lacaita ◽

Andrea Redaelli ◽

...

Keyword(s):

Phase Change ◽

Structural Relaxation ◽

Phase Change Memory ◽

Scaling Behavior ◽

Relaxation Effects ◽

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Improvised explosive device (IED) counter-measures in Iraq

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173248 ◽

2009 ◽

Author(s):

James Ziegler

Keyword(s):

Improvised Explosive Device ◽

Counter Measures ◽

Explosive Device ◽

Improvised Explosive

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Determination of the electric field distribution within multi-quantum-well light emitting diodes by the use of electron beam induced methods

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173352 ◽

2009 ◽

Author(s):

T. Geinzer ◽

R. Heiderhoff ◽

L. J. Balk

Keyword(s):

Electron Beam ◽

Electric Field ◽

Quantum Well ◽

Field Distribution ◽

Light Emitting Diodes ◽

Electric Field Distribution ◽

Light Emitting ◽

Multi Quantum Well

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Unique electrical characterization and in-line monitoring of nano-tipped defects in metal-insulator-metal capacitors

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173355 ◽

2009 ◽

Author(s):

Lieyi Sheng ◽

Eric Snyder ◽

Jason Doub ◽

Valerie Berti ◽

Levi Kriner ◽

...

Keyword(s):

Electrical Characterization ◽

Metal Insulator ◽

Metal Insulator Metal

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