Unique electrical characterization and in-line monitoring of nano-tipped defects in metal-insulator-metal capacitors

2009 ◽  
Author(s):  
Lieyi Sheng ◽  
Eric Snyder ◽  
Jason Doub ◽  
Valerie Berti ◽  
Levi Kriner ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Metal Insulator ◽  
Metal Insulator Metal

Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures

2010 ◽  
pp. NA-NA
Author(s):  
C. Zúñiga-I. ◽  
A. Kosarev ◽  
A. Torres-J. ◽  
P. Rosales-Q. ◽  
W. Calleja-A. ◽  
...  
Keyword(s):  
Dielectric Material ◽  
Electrical Characterization ◽  
Metal Insulator ◽  
Metal Structures ◽  
Metal Insulator Metal

Physical and electrical characterization of HfO2 metal–insulator–metal capacitors for Si analog circuit applications

2003 ◽  
Vol 94 (1) ◽  
pp. 551-557 ◽  
Author(s):  
Hang Hu ◽  
Chunxiang Zhu ◽  
Y. F. Lu ◽  
Y. H. Wu ◽  
T. Liew ◽  
...  
Keyword(s):  
Analog Circuit ◽  
Electrical Characterization ◽  
Metal Insulator ◽  
Metal Insulator Metal

Plasma Deposited Oxynitride Films: Structural and Electrical Characterization

1992 ◽  
Vol 284 ◽  
Author(s):  
S. Scaglione ◽  
L. Mariucci ◽  
A. Mattacchini ◽  
A. Pecora ◽  
G. Fortunato
Keyword(s):  
Electrical Properties ◽  
Thin Film Transistor ◽  
Electrical Characterization ◽  
Gate Insulator ◽  
Silicon Thin Film ◽  
Metal Insulator ◽  
Metal Structures ◽  
Local Bonding ◽  
Metal Insulator Metal ◽  
Structural And Electrical Properties

ABSTRACTIn the present work structural and electrical properties of thin films, deposited by PECVD from He-diluted S1H4+NH3+N2O gas mixtures, have been studied. Film compositions have been analyzed by NRA, RBS and hydrogen content has been determinated by ERDA while Infrared spectroscopy has been used to evaluate the local bonding configurations. Electrical properties have been measured in metal-insulator-metal structures by I-V ramp. From the results obtained, the oxynitride films show suitable properties for application as gate insulator in amorphous silicon thin film transistor.

Physical and electrical characterization of high-k ZrO2 metal–insulator–metal capacitor

2008 ◽  
Vol 516 (23) ◽  
pp. 8333-8336 ◽  
Author(s):  
Joo-Hyung Kim ◽  
Velislava Ignatova ◽  
Peter Kücher ◽  
Johannes Heitmann ◽  
Lars Oberbeck ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Metal Insulator ◽  
High K ◽  
Metal Insulator Metal
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