Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

2014 ◽

Author(s):

D. Jana ◽

S. Maikap ◽

Y.Y. Chen ◽

J.R. Yang

Keyword(s):

Gadolinium Oxide ◽

Cross Point ◽

Switching Material

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The resilience wall: Cross-layer solution strategies

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2014.6839639 ◽

2014 ◽

Cited By ~ 4

Author(s):

Subhasish Mitra ◽

Pradip Bose ◽

Eric Cheng ◽

Chen-Yong Cher ◽

Hyungmin Cho ◽

...

Keyword(s):

Cross Layer ◽

Solution Strategies ◽

Layer Solution

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High-density nano-pillar SiOx-based resistive switching memory using nano-sphere lithography to fabricate a one diode - one resistor (1D-1R) architecture

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2014.6839674 ◽

2014 ◽

Cited By ~ 2

Author(s):

Y. F. Chang ◽

L. Ji ◽

Y. C. Chen ◽

F. Zhou ◽

T. M. Tsai ◽

...

Keyword(s):

Resistive Switching ◽

High Density ◽

Resistive Switching Memory ◽

Switching Memory

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Improved multi-level control of RRAM using pulse-train programming

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2014.6839673 ◽

2014 ◽

Cited By ~ 3

Author(s):

Liang Zhao ◽

Hong-Yu Chen ◽

Shih-Chieh Wu ◽

Zizhen Jiang ◽

Shimeng Yu ◽

...

Keyword(s):

Pulse Train ◽

Level Control ◽

Multi Level

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Influence of technological and geometrical parameters on low-frequency noise in SOI omega-gate nanowire NMOSFETs

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2014.6839653 ◽

2014 ◽

Cited By ~ 4

Author(s):

M. Koyama ◽

M. Casse ◽

R. Coquand ◽

S. Barraud ◽

G. Ghibaudo ◽

...

Keyword(s):

Low Frequency ◽

Geometrical Parameters ◽

Frequency Noise ◽

Low Frequency Noise

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Electroceuticals - replacing drugs by devices enabled through advanced VLSI technologies

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2014.6839635 ◽

2014 ◽

Author(s):

David Prutchi

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Stability/performance assessment of monolithic 3D 6T/8T SRAM cells considering transistor-level interlayer coupling

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2014.6839680 ◽

2014 ◽

Author(s):

Ming-Long Fan ◽

Vita Pi-Ho Hu ◽

Yin-Nien Chen ◽

Pin Su ◽

Ching-Te Chuang

Keyword(s):

Performance Assessment ◽

Interlayer Coupling ◽

Stability Performance

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Self-convergent trimming of embedded logic compatible OTP memory for VT variation reduction in low voltage SRAMs

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2014.6839666 ◽

2014 ◽

Author(s):

Sheng-Yen Chien ◽

Po Yen Lin ◽

Hung-Yu Chen ◽

Chrong Jung Lin ◽

Ya-Chin King

Keyword(s):

Low Voltage ◽

Variation Reduction

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Designer Ge quantum dots Coulomb blockade thermometry

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2014.6839670 ◽

2014 ◽

Author(s):

I. H. Chen ◽

C. C. Wang ◽

P. W. Li

Keyword(s):

Quantum Dots ◽

Coulomb Blockade ◽

Ge Quantum Dots

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Exploring technology solution paths for expaned 3D devices, interconnects and system integrations beyond TSV

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2014.6839702 ◽

2014 ◽

Cited By ~ 1

Author(s):

Herb Huang

Keyword(s):

Technology Solution

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Low current cross-point memory using gadolinium-oxide switching material

The resilience wall: Cross-layer solution strategies

High-density nano-pillar SiOx-based resistive switching memory using nano-sphere lithography to fabricate a one diode - one resistor (1D-1R) architecture

Improved multi-level control of RRAM using pulse-train programming

Influence of technological and geometrical parameters on low-frequency noise in SOI omega-gate nanowire NMOSFETs

Electroceuticals - replacing drugs by devices enabled through advanced VLSI technologies

Stability/performance assessment of monolithic 3D 6T/8T SRAM cells considering transistor-level interlayer coupling

Self-convergent trimming of embedded logic compatible OTP memory for VT variation reduction in low voltage SRAMs

Designer Ge quantum dots Coulomb blockade thermometry

Exploring technology solution paths for expaned 3D devices, interconnects and system integrations beyond TSV

Export Citation Format

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Low current cross-point memory using gadolinium-oxide switching material

The resilience wall: Cross-layer solution strategies

High-density nano-pillar SiOx-based resistive switching memory using nano-sphere lithography to fabricate a one diode - one resistor (1D-1R) architecture

Improved multi-level control of RRAM using pulse-train programming

Influence of technological and geometrical parameters on low-frequency noise in SOI omega-gate nanowire NMOSFETs

Electroceuticals - replacing drugs by devices enabled through advanced VLSI technologies

Stability/performance assessment of monolithic 3D 6T/8T SRAM cells considering transistor-level interlayer coupling

Self-convergent trimming of embedded logic compatible OTP memory for VT variation reduction in low voltage SRAMs

Designer Ge quantum dots Coulomb blockade thermometry

Exploring technology solution paths for expaned 3D devices, interconnects and system integrations beyond TSV

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Latest Publications