Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97

1997 ◽

Cited By ~ 2

Author(s):

Zetterling ◽

Dahlquist ◽

Lundberg ◽

Ostling ◽

Rottner ◽

...

Keyword(s):

Silicon Carbide ◽

High Voltage ◽

Schottky Rectifiers

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Temperature independent current blocking in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97 ◽

10.1109/cornel.1997.649350 ◽

1997 ◽

Cited By ~ 1

Author(s):

Driad ◽

McKinnon ◽

McAlister ◽

Renaud ◽

Wasilewski

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Double Heterojunction ◽

Current Blocking

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Lateral oxide current aperture for InP-based vertical electron current flow devices: Demonstration using RTD's

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97 ◽

10.1109/cornel.1997.649342 ◽

1997 ◽

Cited By ~ 1

Author(s):

Yen ◽

Blank ◽

Mishra

Keyword(s):

Current Flow ◽

Electron Current ◽

Flow Devices

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Performance of InAlGaAs/InGaAs HBTs with tunneling AlAs barrier layer

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97 ◽

10.1109/cornel.1997.649354 ◽

1997 ◽

Author(s):

Valsaraj ◽

Sabbah ◽

Jones ◽

Ikossi-Anastasiou

Keyword(s):

Barrier Layer

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Monte Carlo simulation of THz multipliers

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97 ◽

10.1109/cornel.1997.649343 ◽

1997 ◽

Cited By ~ 2

Author(s):

East ◽

Blakey

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo

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Scattering of electrons at threading dislocations in GaN and consequences for current transport in vertical devices

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97 ◽

10.1109/cornel.1997.649361 ◽

1997 ◽

Cited By ~ 1

Author(s):

Weimann ◽

Eastman

Keyword(s):

Threading Dislocations ◽

Current Transport

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Improved methods for investigating boron related defects in 6H-SiC using deep level transient spectroscopy

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97 ◽

10.1109/cornel.1997.649355 ◽

1997 ◽

Author(s):

Soundararajan ◽

Shaffer ◽

Mazzola ◽

Younan ◽

Saddow

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Transient Spectroscopy ◽

Improved Methods

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Impact ionization in InP-based HEMTs

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97 ◽

10.1109/cornel.1997.649356 ◽

1997 ◽

Author(s):

Webster ◽

Anwar ◽

Wu

Keyword(s):

Impact Ionization

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Material properties dependence of the peak to valley ratio of heterojunction interband tunneling diodes (HITD) and their use in RF circuits

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97 ◽

10.1109/cornel.1997.649340 ◽

1997 ◽

Author(s):

El-Zein ◽

Maracas ◽

Nair ◽

Kramer ◽

Goronkin

Keyword(s):

Material Properties ◽

Rf Circuits ◽

Tunneling Diodes ◽

Interband Tunneling ◽

Peak To Valley Ratio

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Performance optimization of PNP InAlAs/InGaAs HBTs

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97 ◽

10.1109/cornel.1997.649367 ◽

1997 ◽

Cited By ~ 9

Author(s):

Sawdai ◽

Zhang ◽

Pavlidis ◽

Bhattacharya

Keyword(s):

Performance Optimization

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Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

High voltage silicon carbide Junction Barrier Schottky rectifiers

Temperature independent current blocking in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors

Lateral oxide current aperture for InP-based vertical electron current flow devices: Demonstration using RTD's

Performance of InAlGaAs/InGaAs HBTs with tunneling AlAs barrier layer

Monte Carlo simulation of THz multipliers

Scattering of electrons at threading dislocations in GaN and consequences for current transport in vertical devices

Improved methods for investigating boron related defects in 6H-SiC using deep level transient spectroscopy

Impact ionization in InP-based HEMTs

Material properties dependence of the peak to valley ratio of heterojunction interband tunneling diodes (HITD) and their use in RF circuits

Performance optimization of PNP InAlAs/InGaAs HBTs

Export Citation Format

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

High voltage silicon carbide Junction Barrier Schottky rectifiers

Temperature independent current blocking in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors

Lateral oxide current aperture for InP-based vertical electron current flow devices: Demonstration using RTD's

Performance of InAlGaAs/InGaAs HBTs with tunneling AlAs barrier layer

Monte Carlo simulation of THz multipliers

Scattering of electrons at threading dislocations in GaN and consequences for current transport in vertical devices

Improved methods for investigating boron related defects in 6H-SiC using deep level transient spectroscopy

Impact ionization in InP-based HEMTs

Material properties dependence of the peak to valley ratio of heterojunction interband tunneling diodes (HITD) and their use in RF circuits

Performance optimization of PNP InAlAs/InGaAs HBTs

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97
Latest Publications