Material properties dependence of the peak to valley ratio of heterojunction interband tunneling diodes (HITD) and their use in RF circuits

1997 ◽  
Author(s):  
El-Zein ◽  
Maracas ◽  
Nair ◽  
Kramer ◽  
Goronkin
Keyword(s):  
Material Properties ◽  
Rf Circuits ◽  
Tunneling Diodes ◽  
Interband Tunneling ◽  
Peak To Valley Ratio

scholarly journals Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

2002 ◽  
Vol 25 (3) ◽  
pp. 245-248
Author(s):  
K. F. Yarn
Keyword(s):  
Schottky Diode ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Thermionic Emission ◽  
Differential Resistance ◽  
Tunneling Effect ◽  
Peak Current Density ◽  
Interband Tunneling ◽  
First Time ◽  
Peak To Valley Ratio

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of1KA/cm2were achieved at room temperature. In addition, the maximum available power is estimated up to5W/cm2. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.

Microwave performance and modeling of InAs/AlSb/GaSb resonant interband tunneling diodes

2002 ◽  
Vol 49 (1) ◽  
pp. 19-24 ◽  
Author(s):  
P. Fay ◽  
Jiang Lu ◽  
Yanyang Xu ◽  
N. Dame ◽  
D.H. Chow ◽  
...  
Keyword(s):  
Tunneling Diodes ◽  
Interband Tunneling

Influence on Characteristics of RTD Due to Variation of Different Parameters and Material Properties

2017 ◽  
Vol 26 (04) ◽  
pp. 1740022 ◽  
Author(s):  
Banasree Das ◽  
Manas Kumar Parai
Keyword(s):  
Simple Model ◽  
Electronic Transport ◽  
Material Properties ◽  
Resonant Tunneling ◽  
Barrier Structure ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Silvaco Atlas ◽  
Double Barrier Structure ◽  
Peak To Valley Ratio

In this paper, novel features offered by Resonant Tunneling Diode (RTD) are reviewed by simulating it under different conditions. GaAs/AlGaAs based RTD is used as the reference one to obtain the characteristics due to parametric variations. To fulfil this purpose a simple model of resonant electronic transport through a double-barrier structure is developed. I-V characteristics are studied by varying barrier parameters and well width. Different peak and valley currents are measured under these conditions. For the same set of parameters both symmetric and asymmetric cases are considered. Different materials of lower effective mass are also taken into consideration to improve Peak to Valley Ratio (PVR). The Indium (In) based materials are considered to compare the characteristics obtained from the conventional GaAs based RTD structure. All these proposed structures are simulated using Silvaco Atlas software.

scholarly journals Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition

2012 ◽  
Vol 59 (3) ◽  
pp. 602-609 ◽  
Author(s):  
Anisha Ramesh ◽  
Tyler A. Growden ◽  
Paul R. Berger ◽  
Roger Loo ◽  
Wilfried Vandervorst ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Doping Dependence ◽  
Tunneling Diodes ◽  
Delta Doping ◽  
Interband Tunneling
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