Silicon Carbide
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Published By Wiley-VCH Verlag Gmbh & Co. Kgaa

9783527629053, 9783527409532
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Characterization of Defects in Silicon Carbide by Raman Spectroscopy

2011 ◽  
pp. 243-266
Author(s):  
Martin Hundhausen ◽  
Roland Püsche ◽  
Jonas Röhrl ◽  
Lothar Ley
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy

Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects

2011 ◽  
pp. 95-113
Author(s):  
Hiroyuki Nagasawa ◽  
Masayuki Abe ◽  
Kuniaki Yagi ◽  
Takamitsu Kawahara ◽  
Naoki Hatta
Keyword(s):  
High Performance ◽  
Planar Defects ◽  
Vertical Mosfets

Analysis of Interface Trap Parameters from Double-Peak Conductance Spectra Taken on N-Implanted 3C-SiC MOS Capacitors

2011 ◽  
pp. 363-374 ◽  
Author(s):  
M. Krieger ◽  
S. Beljakowa ◽  
L. Trapaidze ◽  
T. Frank ◽  
H. B. Weber ◽  
...  
Keyword(s):  
Interface Trap ◽  
Double Peak ◽  
Mos Capacitors

Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide

2011 ◽  
pp. 181-204
Author(s):  
Martin Rambach ◽  
Anton J. Bauer ◽  
Heiner Ryssel
Keyword(s):  
Silicon Carbide

Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS

2011 ◽  
pp. 411-451
Author(s):  
Christian A. Zorman ◽  
Rocco J. Parro
Keyword(s):  
Silicon Carbide
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