2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

Early stage hot carrier degradation of state-of-the-art LDD N-MOSFETs

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) ◽

10.1109/relphy.2000.843899 ◽

2002 ◽

Cited By ~ 8

Author(s):

S.K. Manhas ◽

M.M. de Souza ◽

A.S. Gates ◽

S.C. Chetlur ◽

E.M. Sankara Narayanan

Keyword(s):

State Of The Art ◽

Early Stage ◽

Hot Carrier ◽

Hot Carrier Degradation

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Hot carrier reliability of lateral DMOS transistors

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) ◽

10.1109/relphy.2000.843910 ◽

2002 ◽

Cited By ~ 2

Author(s):

V. O'Donovan ◽

S. Whiston ◽

A. Deignan ◽

C.N. Chleirigh

Keyword(s):

Hot Carrier

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TDDB improvement in Cu metallization under bias stress

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) ◽

10.1109/relphy.2000.843936 ◽

2002 ◽

Cited By ~ 13

Author(s):

J. Noguchi ◽

N. Ohashi ◽

J. Yasuda ◽

T. Jimbo ◽

H. Yamaguchi ◽

...

Keyword(s):

Cu Metallization ◽

Bias Stress

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Quantitative projections of reliability and performance for low-k/Cu interconnect systems

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) ◽

10.1109/relphy.2000.843939 ◽

2002 ◽

Cited By ~ 3

Author(s):

K. Banerjee ◽

A. Mehrotra ◽

W. Hunter ◽

K.C. Saraswat ◽

K.E. Goodson ◽

...

Keyword(s):

And Performance ◽

Cu Interconnect ◽

Interconnect Systems ◽

Low K

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Transmission line model testing of top-gate amorphous silicon thin film transistors

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) ◽

10.1109/relphy.2000.843929 ◽

2002 ◽

Cited By ~ 4

Author(s):

N. Tosic ◽

F.G. Kuper ◽

T. Mouthaan

Keyword(s):

Thin Film ◽

Transmission Line ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Model Testing ◽

Transmission Line Model ◽

Silicon Thin Film ◽

Line Model

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Neutron-induced boron fission as a major source of soft errors in deep submicron SRAM devices

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) ◽

10.1109/relphy.2000.843906 ◽

2002 ◽

Cited By ~ 25

Author(s):

R.C. Baumann ◽

E.B. Smith

Keyword(s):

Soft Errors ◽

Deep Submicron

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A study of implant damage induced thin oxide film expansion during photoresist dry etching

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) ◽

10.1109/relphy.2000.843947 ◽

2002 ◽

Author(s):

Kuang-Peng Lin ◽

Kai-Ming Ching ◽

Kwo-Shu Huang ◽

Shun-Liang Hsu

Keyword(s):

Oxide Film ◽

Dry Etching ◽

Thin Oxide Film ◽

Thin Oxide

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Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) ◽

10.1109/relphy.2000.843938 ◽

2002 ◽

Cited By ~ 31

Author(s):

R. Tsu ◽

J.W. McPherson ◽

W.R. McKee

Keyword(s):

Dual Damascene ◽

Low K

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MEMS reliability in a vibration environment

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) ◽

10.1109/relphy.2000.843904 ◽

2002 ◽

Cited By ~ 13

Author(s):

D.M. Tanner ◽

J.A. Walraven ◽

K.S. Helgesen ◽

L.W. Irwin ◽

D.L. Gregory ◽

...

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Single contact optical beam induced currents (SCOBIC)-a new failure analysis technique

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) ◽

10.1109/relphy.2000.843950 ◽

2002 ◽

Cited By ~ 5

Author(s):

J.M. Chin ◽

J.C.H. Phang ◽

D.S.H. Chan ◽

C.E. Soh ◽

G. Gilfeather

Keyword(s):

Failure Analysis ◽

Optical Beam ◽

Analysis Technique ◽

Induced Currents ◽

Single Contact

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2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Early stage hot carrier degradation of state-of-the-art LDD N-MOSFETs

Hot carrier reliability of lateral DMOS transistors

TDDB improvement in Cu metallization under bias stress

Quantitative projections of reliability and performance for low-k/Cu interconnect systems

Transmission line model testing of top-gate amorphous silicon thin film transistors

Neutron-induced boron fission as a major source of soft errors in deep submicron SRAM devices

A study of implant damage induced thin oxide film expansion during photoresist dry etching

Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process

MEMS reliability in a vibration environment

Single contact optical beam induced currents (SCOBIC)-a new failure analysis technique

Export Citation Format

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Early stage hot carrier degradation of state-of-the-art LDD N-MOSFETs

Hot carrier reliability of lateral DMOS transistors

TDDB improvement in Cu metallization under bias stress

Quantitative projections of reliability and performance for low-k/Cu interconnect systems

Transmission line model testing of top-gate amorphous silicon thin film transistors

Neutron-induced boron fission as a major source of soft errors in deep submicron SRAM devices

A study of implant damage induced thin oxide film expansion during photoresist dry etching

Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process

MEMS reliability in a vibration environment

Single contact optical beam induced currents (SCOBIC)-a new failure analysis technique

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)
Latest Publications