2017 IEEE International Memory Workshop (IMW)
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TOTAL DOCUMENTS

49
(FIVE YEARS 0)

H-INDEX

7
(FIVE YEARS 0)

Published By IEEE

9781509032747
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Low-Power Z2-FET Capacitorless 1T-DRAM

2017 ◽  
Author(s):  
Mukta Singh Parihar ◽  
Kyung Hwa Lee ◽  
Hassan El Dirani ◽  
Carlos Navarro ◽  
Joris Lacord ◽  
...  
Keyword(s):  
Low Power

High-Speed Voltage-Control Spintronics Memory (High-Speed VoCSM)

2017 ◽  
Author(s):  
Hiroaki Yoda ◽  
Hideyuki Sugiyama ◽  
Tomoaki Inokuchi ◽  
Yuushi Kato ◽  
Yuichi Ohsawa ◽  
...  
Keyword(s):  
High Speed ◽  
Voltage Control

HBM (High Bandwidth Memory) DRAM Technology and Architecture

2017 ◽  
Author(s):  
Hongshin Jun ◽  
Jinhee Cho ◽  
Kangseol Lee ◽  
Ho-Young Son ◽  
Kwiwook Kim ◽  
...  
Keyword(s):  
High Bandwidth

Study of the Energy Consumption Optimization on RRAM Memory Array for SCM Applications

2017 ◽  
Author(s):  
Carlo Cagli ◽  
Gabriel Molas ◽  
Michel Harrand ◽  
Sophie Bernasconi ◽  
Christelle Charpin ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Memory Array ◽  
Energy Consumption Optimization

Neuromorphic Technologies for Next-Generation Cognitive Computing

2017 ◽  
Author(s):  
Pritish Narayanan ◽  
Geoffrey W. Burr ◽  
Stefano Ambrogio ◽  
Robert M. Shelby
Keyword(s):  
Cognitive Computing ◽  
Next Generation

Switching Behavior of HfO2-Based Resistive RAM with Vertical CNT Bottom Electrode

2017 ◽  
Author(s):  
Naga Sruti Avasarala ◽  
Dirk J. Wouters ◽  
Malgorzata Jurczak ◽  
Jan Van Houdt ◽  
Marc Heyns ◽  
...  
Keyword(s):  
Bottom Electrode ◽  
Switching Behavior ◽  
Resistive Ram

In Depth Analysis of 3D NAND Enablers in Gate Stack Integration and Demonstration in 3D Devices

2017 ◽  
Author(s):  
C.-L. Tan ◽  
S. Lavizzari ◽  
P. Blomme ◽  
L. Breuil ◽  
G. Vecchio ◽  
...  
Keyword(s):  
Gate Stack ◽  
Depth Analysis
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