Switching Behavior of HfO2-Based Resistive RAM with Vertical CNT Bottom Electrode

Author(s):  
Naga Sruti Avasarala ◽  
Dirk J. Wouters ◽  
Malgorzata Jurczak ◽  
Jan Van Houdt ◽  
Marc Heyns ◽  
...  
2016 ◽  
Vol 55 (8S2) ◽  
pp. 08PC03 ◽  
Author(s):  
Takahiro Nagata ◽  
Yoshiyuki Yamashita ◽  
Hideki Yoshikawa ◽  
Masataka Imura ◽  
Seungjun Oh ◽  
...  

2014 ◽  
Vol 95 ◽  
pp. 96-99
Author(s):  
Yukiko Ogawa ◽  
Yuji Sutou ◽  
Daisuke Ando ◽  
Junichi Koike

The resistive switching behavior of a low resistive p-type α-Fe2O3 thin film sandwiched between Fe bottom electrode and top electrodes of various materials (Fe, Ni and TiN) was studied by current-voltage measurements. When TiN was used for top electrode of memory cell, the reversible resistive switching behavior was observed for over 100 cycles. From impedance measurement, it was suggested that the resistive switching behavior in the TiN/p-type α-Fe2O3/Fe device is attributed to the change of the contact resistance in the interface between TiN and α-Fe2O3 layers.


2018 ◽  
Vol 17 (03) ◽  
pp. 1760035
Author(s):  
M. M. Cristopher ◽  
K. M. Dhanisha ◽  
M. Abinaya ◽  
P. Deepak Raj ◽  
K. Jeyadheepan ◽  
...  

Thin film memristor behavior depends on the choice of top and bottom electrode material and metal oxide layer. In the present work, the influence of the top and bottom electrode layers on the electric field-induced resistance switching phenomena of TiO2-based MIM was studied. Au/TiO2/NiCr and NiCr/TiO2/Au structures were fabricated by depositing TiO2 active layer by reactive dc magnetron sputtering technique between thermally evaporated NiCr and Au electrodes. TiO2 layer was sputtered with a cathode power of 150[Formula: see text]W keeping the other deposition parameters constant. TiO2 films were analyzed by X-ray diffractometer, field emission scanning electron microscopy and UV–Visible spectrophotometer to investigate their structural, morphological and optical behavior. Structural studies of the films reveal that the samples were amorphous. And the [Formula: see text]–[Formula: see text] analysis for the fabricated MIM structure was analyzed.


2018 ◽  
Vol 1 (3) ◽  
pp. 53
Author(s):  
Bushra Mahadin

Purpose-This paper aims to investigate factors that affect customer switching from Internal Combustion Engine Vehicles (ICEV’s) to Hybrid Electrical Vehicles (HEV’s), in Jordan for the period of (2010-2014).Design/methodology/approach-A self-administered survey was hand-delivered to the targeted sample of car users in Jordan. The authors delivered 400 questionnaires to customers, from which 333 were deemed valid for the analysis, corresponding to the percentage of (83.25%) which indicates the validity of the study. Findings- There was no difference in switching behavior between (ICEV’s) and (HEV’s) based on gender in the Jordanian market. Fuel consumption efficiency was the number one variable that supports the switching behavior towards (HEV's), followed by Eco friendliness, lower taxes and technological features. Price and the current trend in the market were the least supporting factors. In addition to that the perception of the battery life of (HEV's), limited choices in the market, lack of information and fear of the relatively new technology were the major hindering factors of choosing an (HEV).Research limitations-Future research needs to investigate other factors that may affect customers’ behavior such as perceived image, trust, and subjective norms. Future research should investigate into the importance of environmental awareness and new technologies, and gender differences in behavior. From an international marketing standpoint, comparative studies between Jordanian and non-Jordanian customers are potential areas of future research for international marketing strategies and cross-cultural consumer behaviour analysis. Practical implications-The paper identifies the determinants of switching behavior. marketers should focus addressing customers concerns in terms of providing enough information and building awareness towards the technology and it's benefits towards the society and the environment.Originality/value-Our study is one of the few in Jordan that investigates the switching behavior towards vehicles technology. Our study is thought to have made a modest contribution to consumer behaviour literature and, specifically, for decision making process. It offers marketers insights into the determinants of switching behavior towards the hybrid vechicle technology and how this contribute to consumers’ decision making process and attitudes to achieve the intended behavioural outcomes


2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.


2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.


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