Improved performance of mn-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs : GaAs-MISFET

2005 ◽  
Author(s):  
M. Takebe ◽  
N.C. Paul ◽  
K. Nakamura ◽  
M. Tametou ◽  
K. Iiyama ◽  
...  
Keyword(s):  
Ex Situ ◽  
Insulating Layer ◽  
Nitridation Process ◽  
Improved Performance

scholarly journals Reversible Energy Storage in Layered Copper-Based Coordination Polymers: Unveiling the Influence of the Ligand's Functional Group on Their Electrochemical Properties

2020 ◽  
Author(s):  
Marco Amores ◽  
Keisuke Wada ◽  
Ken Sakaushi ◽  
Hiroshi Nishihara
Keyword(s):  
Energy Storage ◽  
Electrochemical Properties ◽  
Coordination Polymers ◽  
Electrode Materials ◽  
Ex Situ ◽  
Suitable Model ◽  
Open Structures ◽  
Improved Performance ◽  
Multielectron Transfer ◽  
Structure Properties

Coordination polymers represent a suitable model to study redox mechanisms in materials where both metal cation and ligand undergo electrochemical reactions and are capable to proceed through reversible multielectron-transfer processes with insertion of cation and anion into their open structures. Designing new coordination polymers for electrochemical energy storage with improved performance relays also on the understanding of their structure-properties relationship. Here, we present a family of copper-based coordination polymer with hexafunctionalized benzene ligands forming a kagome-type layered structure, where the in uence of the functional groups in their structure and electrochemical properties is investigated. Their chemical and structural properties have been explored by means of PXRD, and FTIR and Raman spectroscopies, followed by investigation of their electrochemical performance in Li half-cells by CV and galvanostatic cycling techniques. Ex-situ PXRD, Raman, XPS and ToF-SIMS measurements of cycled electrodes have been carried out providing insights into the redox mechanism of these copper-based coordination polymers as positive electrode materials.<br>

In Situ Nitride Growth Studies by Low Energy Electron Microscopy (LEEM) and Low Energy Electron Diffraction (LEED)

1997 ◽  
Vol 3 (S2) ◽  
pp. 611-612
Author(s):  
E. Bauer ◽  
A. Pavlovska ◽  
I.S.T. Tsong
Keyword(s):  
Low Energy ◽  
Energy Electron ◽  
Ex Situ ◽  
Electron Microscopic ◽  
Insulating Layer ◽  
Light Emitting ◽  
Surface Sensitivity ◽  
Microscopic Studies ◽  
Low Energy Electron

Nitride films play an increasing role in modern electronics, for example silicon nitride as insulating layer in Si-based devices or GaN in blue light emitting diodes and lasers. For this reason they have been the subject of many ex situ electron microscopic studies. A much deeper understanding of the growth of these important materials can be obtained by in situ studies. Although these could be done by SEM, LEEM combined with LEED is much better suited because of its excellent surface sensitivity and diffraction contrast. We have in the past studied the high temperture nitridation of Si(l11) by ammonia (NH3)and the growth of GaN and A1N films on Si(l11) and 6H-SiC(0001) by depositing Ga and Al in the presence of NH3 and will report some of the results of this work for comparison with more recent work using atomic nitrogen instead of NH3.

scholarly journals MATHEMATICAL MODELLING OF NON-STATIONARY HEAT TRANSFER IN A MULTILAYER COMPOSITE MATERIAL

2021 ◽  
Vol 51 (1) ◽  
pp. 9-14
Author(s):  
Dmitriy V. Sorokin ◽  
Alexandr L. Nikiforov
Keyword(s):  
Heat Transfer ◽  
Mathematical Model ◽  
Composite Material ◽  
Temperature Distribution ◽  
Thermal Protection ◽  
Temperature Fields ◽  
Insulating Layer ◽  
Stationary Heat ◽  
Improved Performance ◽  
Stationary Heat Transfer

The article considers the issue of designing a composite textile material based on the use of a 3D textile matrix for firefighter combat clothing with improved performance characteristics. To reduce labour and material costs for design and create an alternative to the experimental selection of the structure and composition of the material, a mathematical model of non-stationary heat transfer in the “environment – composite material – human” system is proposed. The problem of temperature distribution at any time for the outer and inner layers is presented in the form of heat transfer in a multilayer plate. The problem of temperature distribution in the heat-insulating layer of the material is presented in the form of heat transfer through a limited rod in the air. The developed mathematical model allows calculating the distribution of temperature fields in the layers of the material at different values of the effective heat flow and determine the limit parameters of its thermal protection effect.

scholarly journals Reversible Energy Storage in Layered Copper-Based Coordination Polymers: Unveiling the Influence of the Ligand's Functional Group on Their Electrochemical Properties

2020 ◽  
Author(s):  
Marco Amores ◽  
Keisuke Wada ◽  
Ken Sakaushi ◽  
Hiroshi Nishihara
Keyword(s):  
Energy Storage ◽  
Electrochemical Properties ◽  
Coordination Polymers ◽  
Electrode Materials ◽  
Ex Situ ◽  
Suitable Model ◽  
Open Structures ◽  
Improved Performance ◽  
Multielectron Transfer ◽  
Structure Properties

Coordination polymers represent a suitable model to study redox mechanisms in materials where both metal cation and ligand undergo electrochemical reactions and are capable to proceed through reversible multielectron-transfer processes with insertion of cation and anion into their open structures. Designing new coordination polymers for electrochemical energy storage with improved performance relays also on the understanding of their structure-properties relationship. Here, we present a family of copper-based coordination polymer with hexafunctionalized benzene ligands forming a kagome-type layered structure, where the in uence of the functional groups in their structure and electrochemical properties is investigated. Their chemical and structural properties have been explored by means of PXRD, and FTIR and Raman spectroscopies, followed by investigation of their electrochemical performance in Li half-cells by CV and galvanostatic cycling techniques. Ex-situ PXRD, Raman, XPS and ToF-SIMS measurements of cycled electrodes have been carried out providing insights into the redox mechanism of these copper-based coordination polymers as positive electrode materials.<br>

Control of Metal Alloy Oxidation with Electric Fields

1973 ◽  
Vol 31 ◽  
pp. 164-165
Author(s):  
R. R. Dils ◽  
P. S. Follansbee
Keyword(s):  
Electric Fields ◽  
Oxidation Process ◽  
Base Alloy ◽  
Oxide Surface ◽  
Platinum Electrodes ◽  
Insulating Layer ◽  
Iron Base Alloy ◽  
Alloy Oxidation ◽  
Aluminum Oxide Layer ◽  
And Control

Electric fields have been applied across oxides growing on a high temperature alloy and control of the oxidation of the material has been demonstrated. At present, three-fold increases in the oxidation rate have been measured in accelerating fields and the oxidation process has been completely stopped in a retarding field.The experiments have been conducted with an iron-base alloy, Pe 25Cr 5A1 0.1Y, although, in principle, any alloy capable of forming an adherent aluminum oxide layer during oxidation can be used. A specimen is polished and oxidized to produce a thin, uniform insulating layer on one surface. Three platinum electrodes are sputtered on the oxide surface and the specimen is reoxidized.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

Interfacial properties of GaSb/InAs superlattices

1993 ◽  
Vol 51 ◽  
pp. 826-827
Author(s):  
M. E. Twigg ◽  
B. R. Bennett ◽  
J. R. Waterman ◽  
J. L. Davis ◽  
B. V. Shanabrook ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Molecular Beam ◽  
Infrared Detector ◽  
Interfacial Properties ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Absorption Coefficients ◽  
X Ray ◽  
Short Period ◽  
High Optical Absorption

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.

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