P-Type Conductive Behaviors of AlN Co-Doped ZnO Films Deposited by the Atomic Layer Deposition

2012 ◽  
pp. 19-25
Author(s):  
Yu-Mi Kim ◽  
Kwang-Seok Jeong ◽  
Ho-Jin Yun ◽  
Seung-Dong Yang ◽  
Sang-Youl Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

In situ Al-doped ZnO films by atomic layer deposition with an interrupted flow

2015 ◽  
Vol 165 ◽  
pp. 245-252 ◽  
Author(s):  
Jheng-Ming Huang ◽  
Ching-Shun Ku ◽  
Chih-Ming Lin ◽  
San-Yuan Chen ◽  
Hsin-Yi Lee
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno ◽  
Interrupted Flow

Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition

2014 ◽  
Vol 57 ◽  
pp. 23-28 ◽  
Author(s):  
Zhixin Wan ◽  
Won-Sub Kwack ◽  
Woo-Jae Lee ◽  
Seung-II Jang ◽  
Hye-Ri Kim ◽  
...  
Keyword(s):  
Optical Properties ◽  
Atomic Layer Deposition ◽  
Glass Substrate ◽  
Atomic Layer ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Layer Deposition ◽  
Doped Zno

Characteristics of Al-Doped ZnO Films Grown by Atomic Layer Deposition for Silicon Nanowire Photovoltaic Device

2012 ◽  
Vol 12 (7) ◽  
pp. 5330-5335 ◽  
Author(s):  
Byeong-Yun Oh ◽  
Jin-Woo Han ◽  
Dae-Shik Seo ◽  
Kwang-Young Kim ◽  
Seong-Ho Baek ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Nanowire ◽  
Atomic Layer ◽  
Photovoltaic Device ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno

Low temperature method to passivate oxygen vacancies in un-doped ZnO films using atomic layer deposition

2018 ◽  
Vol 660 ◽  
pp. 852-858 ◽  
Author(s):  
Yue Wang ◽  
Kyung-Mun Kang ◽  
Minjae Kim ◽  
Hyung-Ho Park
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
Zno Films ◽  
Temperature Method ◽  
Layer Deposition ◽  
Doped Zno

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

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