Migration-Enhanced Epitaxy and its Application

2019 ◽  
pp. 41-56
Author(s):  
Yoshiji Horikoshi
Keyword(s):  
Migration Enhanced Epitaxy

scholarly journals Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates

2001 ◽  
Vol 78 (21) ◽  
pp. 3271-3273 ◽  
Author(s):  
J. Sadowski ◽  
R. Mathieu ◽  
P. Svedlindh ◽  
J. Z. Domagała ◽  
J. Bak-Misiuk ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Migration Enhanced Epitaxy ◽  
Mn Content ◽  
Structural And Magnetic Properties

Epitaxial Growth of CuAu–Ordered CuInSe2 Structural Polytypes by Migration Enhanced Epitaxy

1999 ◽  
Vol 583 ◽  
Author(s):  
B. J. Stanbery ◽  
C.-H. Chang ◽  
S. Kim ◽  
S. Kincal ◽  
G. Lippold ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Epitaxial Films ◽  
Scattering Data ◽  
Chalcopyrite Structure ◽  
Crystallographic Structure ◽  
System Parameters ◽  
Migration Enhanced Epitaxy ◽  
Growth System ◽  
Copper Excess

AbstractMigration-Enhanced Epitaxy (MEE) has been successfully employed to grow epitaxial films of the ternary compound CuInSe2 on (001) GaAs that are ordered in a CuAu crystallographic structure rather than the compound's equilibrium chalcopyrite structure. Evidence for this structural polytype is provided by XRD, TEM–TED, and Raman scattering data. Film growth under the conditions employed for this study occurs in a Stranski-Krastanov mode. The effects of growth system parameters and overall stoichiometry on 3–D island formation are described, including our observation that ordering of those islands into quasiperiodic self-assembled arrays occurs only in the case of nonstoichiometric copper excess.

GaAs Heteroepitaxy on SiGe-on-Insulator Using Ge Condensation and Migration Enhanced Epitaxy

2019 ◽  
Vol 6 (1) ◽  
pp. 95-98
Author(s):  
Hoon-Jung Oh ◽  
Kyu Jin Choi ◽  
Wei Yip Loh ◽  
Thwin Htoo ◽  
Soo Jin Chua ◽  
...  
Keyword(s):  
Migration Enhanced Epitaxy ◽  
And Migration

Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer

2001 ◽  
Vol 230 (3-4) ◽  
pp. 387-391 ◽  
Author(s):  
Kazuhide Kusakabe ◽  
Katsumi Kishino ◽  
Akihiko Kikuchi ◽  
Takayuki Yamada ◽  
Daisuke Sugihara ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
Migration Enhanced Epitaxy

Fabrication of AlAs/Al/AlAs heterostructures by molecular beam epitaxy and migration enhanced epitaxy

1991 ◽  
Vol 111 (1-4) ◽  
pp. 221-227 ◽  
Author(s):  
Takafumi Yao ◽  
Hiroaki Nakahara ◽  
Hirofumi Matuhata ◽  
Yasumasa Okada
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Migration Enhanced Epitaxy ◽  
And Migration
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