GaAs Heteroepitaxy on SiGe-on-Insulator Using Ge Condensation and Migration Enhanced Epitaxy

2019 ◽  
Vol 6 (1) ◽  
pp. 95-98
Author(s):  
Hoon-Jung Oh ◽  
Kyu Jin Choi ◽  
Wei Yip Loh ◽  
Thwin Htoo ◽  
Soo Jin Chua ◽  
...  
Keyword(s):  
Migration Enhanced Epitaxy ◽  
And Migration

Fabrication of AlAs/Al/AlAs heterostructures by molecular beam epitaxy and migration enhanced epitaxy

1991 ◽  
Vol 111 (1-4) ◽  
pp. 221-227 ◽  
Author(s):  
Takafumi Yao ◽  
Hiroaki Nakahara ◽  
Hirofumi Matuhata ◽  
Yasumasa Okada
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Migration Enhanced Epitaxy ◽  
And Migration

Periodicities in the X-Ray Diffraction of Low Order ALAS/GAAS Superlattices

1991 ◽  
Vol 230 ◽  
Author(s):  
Joseph Pellegrino ◽  
S. Qadri ◽  
W. Tseng ◽  
W. R. Miller ◽  
J. Comas
Keyword(s):  
Growth Conditions ◽  
X Ray Diffraction ◽  
Satellite Peak ◽  
X Ray ◽  
Migration Enhanced Epitaxy ◽  
Diffraction Peaks ◽  
Superlattice Structures ◽  
And Migration ◽  
Possible Cause ◽  
Good Agreement

AbstractIn this work we examine the physical properties for the superlattice system (GaAs)n1 (AlAs)n2/GaAs(100) for low values of n1 and n2, i.e., n1 = n2 = 3, 6, 12. Normal, interrupted growth, and migration enhanced epitaxy (MEE) growth techniques were used to grow the superlattice structures in a molecular beam epitaxy system. X-ray diffraction spectra were obtained, and the major and satellite peak positions were analyzed to obtain the superlattice periodicity. An analysis of the major diffraction peaks and their associated satellites produced superlattice periodicity in good agreement with theory. Diffraction peaks were also observed in regions adjacent to the primary diffraction peaks which did not occur in the expected satellite positions. An analysis of these peaks relative to the primary peak indicate periodicities corresponding to layer thickness greater than the intended period. One possible cause for these periodicities is growth conditions that exist during the growth of the superlattice which result in the deposition of fractional monolayers. In this study we present results which suggest that an arsenic-deficient growth condition may be a contributing factor in the deposition of fractional monolayers.

New Approach to Growth of High-Quality GaAs Layers on Si Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
Jukka Varrio ◽  
Arto Salokatve ◽  
Harry Asonen ◽  
Minna Hovinen ◽  
Markus Pessa ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Layer Growth ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
New Approach ◽  
Si Substrates ◽  
Surface Steps ◽  
Transmission Electron ◽  
Migration Enhanced Epitaxy ◽  
And Migration

AbstractGaAs layers were grown on Si (001) substrates by molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE). They were examined by transmission electron microscopy, doublecrystal X-ray diffraction and Rutherford backscattering/channeling technique. Initial layer growth in both MEE and MBE was governed by three-dimensional nucleation but a stronger tendency for GaAs islands to align along the surface steps of Si was observed in the case of MEE. There was no measurable tilt between the (001) planes of GaAs and Si if growth was initiated by MEE at low temperature, prior to further growth by MBE at higher temperatures. On the contrary, the tilt angle was 0.34• when the entire structure was prepared by conventional two-step MBE. Rutherford backscattering measurements indicated a significant reduction in the density of defects throughout MEE/MBE GaAs in comparison with MBE GaAs.

Sign in / Sign up

Export Citation Format

Share Document