Adsorption on a Graphite Substrate

2021 ◽  
pp. 213-260
Keyword(s):  
Author(s):  
George H. N. Riddle ◽  
Benjamin M. Siegel

A routine procedure for growing very thin graphite substrate films has been developed. The films are grown pyrolytically in an ultra-high vacuum chamber by exposing (111) epitaxial nickel films to carbon monoxide gas. The nickel serves as a catalyst for the disproportionation of CO through the reaction 2C0 → C + CO2. The nickel catalyst is prepared by evaporation onto artificial mica at 400°C and annealing for 1/2 hour at 600°C in vacuum. Exposure of the annealed nickel to 1 torr CO for 3 hours at 500°C results in the growth of very thin continuous graphite films. The graphite is stripped from its nickel substrate in acid and mounted on holey formvar support films for use as specimen substrates.The graphite films, self-supporting over formvar holes up to five microns in diameter, have been studied by bright and dark field electron microscopy, by electron diffraction, and have been shadowed to reveal their topography and thickness. The films consist of individual crystallites typically a micron across with their basal planes parallel to the surface but oriented in different, apparently random directions about the normal to the basal plane.


Author(s):  
C. H. Carter ◽  
J. E. Lane ◽  
J. Bentley ◽  
R. F. Davis

Silicon carbide (SiC) is the generic name for a material which is produced and fabricated by a number of processing routes. One of the three SiC materials investigated at NCSU is Norton Company's NC-430, which is produced by reaction-bonding of Si vapor with a porous SiC host which also contains free C. The Si combines with the free C to form additional SiC and a second phase of free Si. Chemical vapor deposition (CVD) of CH3SiCI3 onto a graphite substrate was employed to produce the second SiC investigated. This process yielded a theoretically dense polycrystalline material with highly oriented grains. The third SiC was a pressureless sintered material (SOHIO Hexoloy) which contains B and excess C as sintering additives. These materials are candidates for applications such as components for gas turbine, adiabatic diesel and sterling engines, recouperators and heat exchangers.


Langmuir ◽  
2011 ◽  
Vol 27 (1) ◽  
pp. 15-18 ◽  
Author(s):  
Tej Bhinde ◽  
Tamsin K. Phillips ◽  
Stuart M. Clarke ◽  
Thomas Arnold ◽  
Julia E. Parker

2003 ◽  
Vol 103 (1-2) ◽  
pp. 182-186 ◽  
Author(s):  
Olga V. Makarova ◽  
Derrick C. Mancini ◽  
Nicolaie Moldovan ◽  
Ralu Divan ◽  
Cha-Mei Tang ◽  
...  

2010 ◽  
Vol 6 (2) ◽  
pp. 121-126 ◽  
Author(s):  
Fitria Rahmawati ◽  
Sayekti Wahyuningsih ◽  
Pamularsih A.W

Thin film of TiO2 on graphite substrat has been prepared by means of chemical bath deposition. Cetyltrimethylammonium Bromide served  as linking agent of synthesized TiO2 to graphite substrate.The optical microscope and Scanning Electron Microscope (SEM) indicate that surfactant concentration affects the pore morphology of thin film Surface Area Analysis (SAA) of thin film indicated that the pore of thin film included in mesopore category. The anatase phase of TiO2 quantity arised as the surfactant concentration increase, gave high efficiency of induced photon conversion to current efficiency (% IPCE).   Keywords: thin film, TiO2, deposition, graphite


Shinku ◽  
2003 ◽  
Vol 46 (5) ◽  
pp. 429-432 ◽  
Author(s):  
Shunsuke KAWAKI ◽  
Won-Chul MOON ◽  
Masamichi YOSHIMURA ◽  
Kazuyuki UEDA

Author(s):  
Nisar Ahmed ◽  
Zuhair S. Khan ◽  
Abaid Ashraf ◽  
Hina Pervaiz ◽  
Mohsin Ali Marwat ◽  
...  

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