Metal Gate Electrode for Advanced CMOS Application

2012 ◽  
pp. 355-378 ◽  
Author(s):  
Wenwu Wang ◽  
Xiaolei Wang ◽  
Kai Han
Keyword(s):  
Gate Electrode ◽  
Metal Gate

Boron Transport Through Surface Channel pMOS Using W-poly Metal Gate Electrode

2002 ◽  
Vol 149 (8) ◽  
pp. G441 ◽  
Author(s):  
Sang-Wook Park ◽  
Dong-Jin Kim ◽  
Chan-Ho Lee ◽  
Seung-Cheol Lee ◽  
Noh-Yeal Kwak ◽  
...  
Keyword(s):  
Gate Electrode ◽  
Metal Gate

Low-resistivity poly-metal gate electrode durable for high-temperature processing

1996 ◽  
Vol 43 (11) ◽  
pp. 1864-1869 ◽  
Author(s):  
Y. Akasaka ◽  
S. Suehiro ◽  
K. Nakajima ◽  
T. Nakasugi ◽  
K. Miyano ◽  
...  
Keyword(s):  
High Temperature ◽  
Gate Electrode ◽  
Metal Gate ◽  
Low Resistivity ◽  
High Temperature Processing

Highly Reliable Metal Gate nMOSFETs by Improved CVD-WSix films with Work Function of 4.3eV

2004 ◽  
Vol 811 ◽  
Author(s):  
Kazuaki Nakajima ◽  
Hiroshi Nakazawa ◽  
Katsuyuki Sekine ◽  
Kouji Matsuo ◽  
Tomohiro Saito ◽  
...  
Keyword(s):  
Work Function ◽  
Leakage Current ◽  
Power Supply ◽  
Supply Voltage ◽  
Gate Length ◽  
Gate Electrode ◽  
Metal Gate ◽  
Power Supply Voltage ◽  
Drive Current

ABSTRACTIn this paper, we first propose an improved CVD-WSix metal gate suitable for use with nMOSFETs. Work function of CVD-WSi3.9 gate estimated from C-V measurements was 4.3eV. The nMOSFET using CVD-WSi3.9 gate electrode showed that Vth variation of L/W=1 μm/10μm nMOSFETs can be suppressed to be lower than 8mV in 22chip. In CVD-WSi3.9 gate MOSFETs with gate length of 50nm, a drive current of 636μA/μm was achieved for off-state leakage current of 35nA/μm at 1.0V of power supply voltage. By using CVD-WSi3.9 gate electrode, highly reliable metal gate nMOSFETs can be realized.

An optimized W process for metal gate electrode gap filling application

2015 ◽  
Author(s):  
Jianhua Xu ◽  
Xuezhen Jing ◽  
Xiaoniu Fu ◽  
Xiaona Wang ◽  
Jingjing Tan ◽  
...  
Keyword(s):  
Gap Filling ◽  
Gate Electrode ◽  
Metal Gate ◽  
Electrode Gap

Fully Silicided Ni[sub 1−x]Pt[sub x]Si Metal Gate Electrode for p-MOSFETs

2005 ◽  
Vol 8 (7) ◽  
pp. G156 ◽  
Author(s):  
R. T. P. Lee ◽  
S. L. Liew ◽  
W. D. Wang ◽  
E. K. C. Chua ◽  
S. Y. Chow ◽  
...  
Keyword(s):  
Gate Electrode ◽  
Metal Gate

Thermally stable high effective work function TaCN thin films for metal gate electrode applications

2009 ◽  
Vol 105 (5) ◽  
pp. 053516 ◽  
Author(s):  
C. Adelmann ◽  
J. Meersschaut ◽  
L.-Å. Ragnarsson ◽  
T. Conard ◽  
A. Franquet ◽  
...  
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Thermally Stable ◽  
Gate Electrode ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function

Study of grain size and polishing performance of aluminum film as metal gate electrode

2015 ◽  
Author(s):  
Xiaoniu Fu ◽  
Xiaona Wang ◽  
Jianhua Xu ◽  
Wufeng Deng ◽  
Ziying Zhang ◽  
...  
Keyword(s):  
Grain Size ◽  
Aluminum Film ◽  
Gate Electrode ◽  
Metal Gate
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