Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress
1994 ◽
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Keyword(s):
2011 ◽
Vol 58
(9)
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pp. 3034-3041
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Keyword(s):
2011 ◽
Vol 58
(10)
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pp. 3501-3505
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2017 ◽
Vol 56
(10)
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pp. 108001
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1992 ◽
Vol 36
(1)
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pp. 76-82
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1998 ◽
Vol 37
(Part 1, No. 3B)
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pp. 1064-1066
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