High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

2014 ◽  
Vol 25 (1) ◽  
pp. 134-141 ◽  
Author(s):  
Mazran Esro ◽  
George Vourlias ◽  
Christopher Somerton ◽  
William I. Milne ◽  
George Adamopoulos
Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 612 ◽  
Author(s):  
Jae Heo ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Jingu Kang ◽  
Ho-Hyun Park ◽  
...  

2018 ◽  
Vol 660 ◽  
pp. 814-818 ◽  
Author(s):  
Jaeyoung Kim ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Sung Kyu Park ◽  
Yong-Hoon Kim

2008 ◽  
Vol 41 (12) ◽  
pp. 125102 ◽  
Author(s):  
Chen Sha Li ◽  
Yu Ning Li ◽  
Yi Liang Wu ◽  
Beng S Ong ◽  
Rafik O Loutfy

2009 ◽  
Vol 19 (11) ◽  
pp. 1626 ◽  
Author(s):  
Chen-sha Li ◽  
Yu-ning Li ◽  
Yi-liang Wu ◽  
Beng-S. Ong ◽  
Rafik-O. Loutfy

2007 ◽  
Vol 129 (10) ◽  
pp. 2750-2751 ◽  
Author(s):  
Beng S. Ong ◽  
Chensha Li ◽  
Yuning Li ◽  
Yiliang Wu ◽  
Rafik Loutfy

2021 ◽  
Vol 11 (10) ◽  
pp. 4393
Author(s):  
Yongbo Wu ◽  
Linfeng Lan ◽  
Penghui He ◽  
Yilong Lin ◽  
Caihao Deng ◽  
...  

Over the past decade, there have been many reports on solution-processed oxide thin-film transistors (TFTs) with high mobility (even >100 cm2 V−1s−1). However, the capacitance uncertainty of the solution-processed oxide gate dielectrics leads to serious overestimation of the mobility. Here, solution-processed AlOx dielectrics are investigated systematically, and the effect of mobile ions on the frequency-dependent capacitance of the solution-processed AlOx dielectrics is also studied. It was found that the capacitance of the AlOx depends on the frequency seriously when the annealing temperature is lower than 300 °C, and the water treatment causes more seriously frequency-dependent capacitance. The strong frequency-dependent capacitance of the AlOx annealed at 250 or 300 °C is attributed to relaxation polarization of the weakly bound ions in the incompletely decomposed AlOx films. The water treatment introduces a large number of protons (H+) that would migrate to the ITO/AlOx interface under a certain electric field and form an electric double layer (EDL) that has ultrahigh capacitance at low frequency.


2011 ◽  
Vol 32 (1) ◽  
pp. 90-92 ◽  
Author(s):  
Chia-Yu Wei ◽  
Shu-Hao Kuo ◽  
Yu-Ming Hung ◽  
Wen-Chieh Huang ◽  
Feri Adriyanto ◽  
...  

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