Stability and spacial trap state distribution of solution processed ZnO-thin film transistors

2013 ◽  
Vol 113 (15) ◽  
pp. 154502 ◽  
Author(s):  
Marlis Ortel ◽  
Steve Pittner ◽  
Veit Wagner
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Trap State ◽  
State Distribution ◽  
Solution Processed

High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

2014 ◽  
Vol 25 (1) ◽  
pp. 134-141 ◽  
Author(s):  
Mazran Esro ◽  
George Vourlias ◽  
Christopher Somerton ◽  
William I. Milne ◽  
George Adamopoulos
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Zno Thin Film ◽  
Solution Processed

Direct photopatternable organic–inorganic hybrid gate dielectric for solution-processed flexible ZnO thin film transistors

2011 ◽  
Vol 21 (32) ◽  
pp. 11879 ◽  
Author(s):  
Yangho Jung ◽  
Taewhan Jun ◽  
Areum Kim ◽  
Keunkyu Song ◽  
Tae Hoon Yeo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Zno Thin Film ◽  
Solution Processed ◽  
Inorganic Hybrid

Low-temperature-annealed alumina/polyimide gate insulators for solution-processed ZnO thin-film transistors

2014 ◽  
Vol 313 ◽  
pp. 382-388 ◽  
Author(s):  
Sungmi Yoo ◽  
Jun-Young Yoon ◽  
Juwhan Ryu ◽  
Yun Ho Kim ◽  
Jae-Won Ka ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Solution Processed ◽  
Gate Insulators

Revealing Al evaporation-assisted functions in solution-processed ZnO thin film transistors

2014 ◽  
Vol 2 (47) ◽  
pp. 10209-10216 ◽  
Author(s):  
Tae Sung Kang ◽  
Tae Yoon Kim ◽  
Kap Soo Yoon ◽  
Jong Min Kim ◽  
Hyun Sik Im ◽  
...  
Keyword(s):  
Thin Film ◽  
Space Charge ◽  
Space Charge Region ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Solution Processed ◽  
Layer Form ◽  
Oxygen Ions

Impregnated Al atoms inside the ZnO layer form Al–O bonds with oxygen ions and may reduce the concentration of weakly bonded oxygen as well as the space charge region, significantly reducing the polar ZnO surface.

Surface Modification of a Polyimide Gate Insulator with an Yttrium Oxide Interlayer for Aqueous-Solution-Processed ZnO Thin-Film Transistors

Langmuir ◽  
2013 ◽  
Vol 29 (23) ◽  
pp. 7143-7150 ◽  
Author(s):  
Kwang-Suk Jang ◽  
Duyoung Wee ◽  
Yun Ho Kim ◽  
Jinsoo Kim ◽  
Taek Ahn ◽  
...  
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Surface Modification ◽  
Yttrium Oxide ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Solution Processed
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