Stable, Solution-Processed, High-Mobility ZnO Thin-Film Transistors

2007 ◽  
Vol 129 (10) ◽  
pp. 2750-2751 ◽  
Author(s):  
Beng S. Ong ◽  
Chensha Li ◽  
Yuning Li ◽  
Yiliang Wu ◽  
Rafik Loutfy
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Stable Solution ◽  
High Mobility ◽  
Zno Thin Film ◽  
Solution Processed

High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

2014 ◽  
Vol 25 (1) ◽  
pp. 134-141 ◽  
Author(s):  
Mazran Esro ◽  
George Vourlias ◽  
Christopher Somerton ◽  
William I. Milne ◽  
George Adamopoulos
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Zno Thin Film ◽  
Solution Processed

Toward Stable Solution-Processed High-Mobility p-Type Thin Film Transistors Based on Halide Perovskites

ACS Nano ◽  
2020 ◽  
Vol 14 (11) ◽  
pp. 14790-14797
Author(s):  
Santanu Jana ◽  
Emanuel Carlos ◽  
Shrabani Panigrahi ◽  
Rodrigo Martins ◽  
Elvira Fortunato
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Stable Solution ◽  
High Mobility ◽  
Solution Processed ◽  
Halide Perovskites ◽  
P Type

Performance improvement for solution-processed high-mobility ZnO thin-film transistors

2008 ◽  
Vol 41 (12) ◽  
pp. 125102 ◽  
Author(s):  
Chen Sha Li ◽  
Yu Ning Li ◽  
Yi Liang Wu ◽  
Beng S Ong ◽  
Rafik O Loutfy
Keyword(s):  
Thin Film ◽  
Performance Improvement ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Zno Thin Film ◽  
Solution Processed

Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors

2009 ◽  
Vol 19 (11) ◽  
pp. 1626 ◽  
Author(s):  
Chen-sha Li ◽  
Yu-ning Li ◽  
Yi-liang Wu ◽  
Beng-S. Ong ◽  
Rafik-O. Loutfy
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Zno Thin Film ◽  
Solution Processed

Highly stable solution-processed ZnO thin film transistors prepared via a simple Al evaporation process

2014 ◽  
Vol 2 (8) ◽  
pp. 1390-1395 ◽  
Author(s):  
Tae Sung Kang ◽  
Tae Yoon Kim ◽  
Gyu Min Lee ◽  
Hyun Chul Sohn ◽  
Jin Pyo Hong
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Stable Solution ◽  
Zno Thin Film ◽  
Evaporation Process ◽  
Zno Film ◽  
Solution Processed ◽  
Impregnation Process ◽  
Al Nanoparticles ◽  
Device Stability

The possible nature of the improved device stability is proposed by employing the formation of Al nanoparticles (NPs) on the back channel of a ZnO film and a partial Al atom (ion) impregnation process.

Stability and spacial trap state distribution of solution processed ZnO-thin film transistors

2013 ◽  
Vol 113 (15) ◽  
pp. 154502 ◽  
Author(s):  
Marlis Ortel ◽  
Steve Pittner ◽  
Veit Wagner
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Trap State ◽  
State Distribution ◽  
Solution Processed

High-Mobility Pentacene-Based Thin-Film Transistors With a Solution-Processed Barium Titanate Insulator

2011 ◽  
Vol 32 (1) ◽  
pp. 90-92 ◽  
Author(s):  
Chia-Yu Wei ◽  
Shu-Hao Kuo ◽  
Yu-Ming Hung ◽  
Wen-Chieh Huang ◽  
Feri Adriyanto ◽  
...  
Keyword(s):  
Thin Film ◽  
Barium Titanate ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Solution Processed

scholarly journals Air-stable solution-processed n-channel organic thin film transistors with polymer-enhanced morphology

2015 ◽  
Vol 106 (18) ◽  
pp. 183301 ◽  
Author(s):  
Zhengran He ◽  
Shoieb Shaik ◽  
Sheng Bi ◽  
Jihua Chen ◽  
Dawen Li
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Stable Solution ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Solution Processed

Evidence for Pseudocapacitance and Faradaic Charge Transfer in High-Mobility Thin-Film Transistors with Solution-Processed Oxide Dielectrics

2020 ◽  
Vol 11 (7) ◽  
pp. 2765-2771 ◽  
Author(s):  
Xiaoci Liang ◽  
Ling Liu ◽  
Guangshuo Cai ◽  
Peng Yang ◽  
Yanli Pei ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Transfer ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Solution Processed
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