Solution-processed high-mobility ZnO thin film transistors based on multiple-stacked channel layer doped with Hf and Mg

2018 ◽  
Vol 120 ◽  
pp. 395-401 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Dongjin Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Zno Thin Film ◽  
Solution Processed ◽  
Channel Layer

High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

2014 ◽  
Vol 25 (1) ◽  
pp. 134-141 ◽  
Author(s):  
Mazran Esro ◽  
George Vourlias ◽  
Christopher Somerton ◽  
William I. Milne ◽  
George Adamopoulos
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Zno Thin Film ◽  
Solution Processed

Performance improvement for solution-processed high-mobility ZnO thin-film transistors

2008 ◽  
Vol 41 (12) ◽  
pp. 125102 ◽  
Author(s):  
Chen Sha Li ◽  
Yu Ning Li ◽  
Yi Liang Wu ◽  
Beng S Ong ◽  
Rafik O Loutfy
Keyword(s):  
Thin Film ◽  
Performance Improvement ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Zno Thin Film ◽  
Solution Processed

Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors

2009 ◽  
Vol 19 (11) ◽  
pp. 1626 ◽  
Author(s):  
Chen-sha Li ◽  
Yu-ning Li ◽  
Yi-liang Wu ◽  
Beng-S. Ong ◽  
Rafik-O. Loutfy
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Zno Thin Film ◽  
Solution Processed

Stable, Solution-Processed, High-Mobility ZnO Thin-Film Transistors

2007 ◽  
Vol 129 (10) ◽  
pp. 2750-2751 ◽  
Author(s):  
Beng S. Ong ◽  
Chensha Li ◽  
Yuning Li ◽  
Yiliang Wu ◽  
Rafik Loutfy
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Stable Solution ◽  
High Mobility ◽  
Zno Thin Film ◽  
Solution Processed

High-Mobility Pentacene-Based Thin-Film Transistors With a Solution-Processed Barium Titanate Insulator

2011 ◽  
Vol 32 (1) ◽  
pp. 90-92 ◽  
Author(s):  
Chia-Yu Wei ◽  
Shu-Hao Kuo ◽  
Yu-Ming Hung ◽  
Wen-Chieh Huang ◽  
Feri Adriyanto ◽  
...  
Keyword(s):  
Thin Film ◽  
Barium Titanate ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Solution Processed

scholarly journals High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric

Materials ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 852 ◽  
Author(s):  
Seungbeom Choi ◽  
Kyung-Tae Kim ◽  
Sung Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Linear Type ◽  
Channel Layer ◽  
Indium Gallium

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.

High-mobility flexible thin-film transistors with a low-temperature zirconium-doped indium oxide channel layer

2016 ◽  
Vol 10 (6) ◽  
pp. 493-497 ◽  
Author(s):  
Peng Xiao ◽  
Ting Dong ◽  
Linfeng Lan ◽  
Zhenguo Lin ◽  
Wei Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Channel Layer
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