Nanomembranes: Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor (Adv. Funct. Mater. 41/2014)

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

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Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure

Electronics ◽

10.3390/electronics8020241 ◽

2019 ◽

Vol 8 (2) ◽

pp. 241 ◽

Cited By ~ 1

Author(s):

Huolin Huang ◽

Feiyu Li ◽

Zhonghao Sun ◽

Nan Sun ◽

Feng Zhang ◽

...

Keyword(s):

Gallium Nitride ◽

Field Effect ◽

Field Effect Transistor ◽

Blocking Layer ◽

Vertical Field ◽

Current Blocking Layer ◽

Effect Transistor ◽

Vertical Field Effect ◽

Vertical Field Effect Transistor ◽

Current Blocking

A gallium nitride (GaN) semiconductor vertical field-effect transistor (VFET) has several attractive advantages such as high power density capability and small device size. Currently, some of the main issues hindering its development include the realization of normally off operation and the improvement of high breakdown voltage (BV) characteristics. In this work, a trenched-gate scheme is employed to realize the normally off VFET. Meanwhile, an additional back current blocking layer (BCBL) is proposed and inserted into the GaN normally off VFET to improve the device performance. The electrical characteristics of the proposed device (called BCBL-VFET) are investigated systematically and the structural parameters are optimized through theoretical calculations and TCAD simulations. We demonstrate that the BCBL-VFET exhibits a normally off operation with a large positive threshold voltage of 3.5 V and an obviously increased BV of 1800 V owing to the uniform electric field distribution achieved around the gate region. However, the device only shows a small degradation of on-resistance (RON). The proposed scheme provides a useful reference for engineers in device fabrication work and will be promising for the applications of power electronics.

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Piezoelectric Pb(Zr0.52Ti0.48)O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

Journal of Applied Physics ◽

10.1063/1.3282706 ◽

2010 ◽

Vol 107 (2) ◽

pp. 024101 ◽

Cited By ~ 10

Author(s):

Meiyong Liao ◽

Yasuhito Gotoh ◽

Hiroshi Tsuji ◽

Kiyomi Nakajima ◽

Masataka Imura ◽

...

Keyword(s):

Thin Films ◽

Single Crystal ◽

Field Effect ◽

Field Effect Transistor ◽

Single Crystal Diamond ◽

Effect Transistor

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Field-effect transistor on pentacene single crystal

Applied Physics Letters ◽

10.1063/1.1631736 ◽

2003 ◽

Vol 83 (23) ◽

pp. 4773-4775 ◽

Cited By ~ 194

Author(s):

V. Y. Butko ◽

X. Chi ◽

D. V. Lang ◽

A. P. Ramirez

Keyword(s):

Single Crystal ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Single crystal SrTiO3 field-effect transistor with an atomically flat amorphous CaHfO3 gate insulator

Applied Physics Letters ◽

10.1063/1.1773361 ◽

2004 ◽

Vol 85 (3) ◽

pp. 425-427 ◽

Cited By ~ 49

Author(s):

Keisuke Shibuya ◽

Tsuyoshi Ohnishi ◽

Mikk Lippmaa ◽

Masashi Kawasaki ◽

Hideomi Koinuma

Keyword(s):

Single Crystal ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Insulator ◽

Effect Transistor ◽

Atomically Flat

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Charge carrier transport in high purity perylene single crystal studied by time-of-flight measurements and through field effect transistor characteristics

Chemical Physics ◽

10.1016/j.chemphys.2006.02.017 ◽

2006 ◽

Vol 325 (1) ◽

pp. 160-169 ◽

Cited By ~ 37

Author(s):

Masahiro Kotani ◽

Koji Kakinuma ◽

Masafumi Yoshimura ◽

Kouta Ishii ◽

Saori Yamazaki ◽

...

Keyword(s):

Charge Carrier ◽

Single Crystal ◽

High Purity ◽

Field Effect ◽

Carrier Transport ◽

Field Effect Transistor ◽

Time Of Flight ◽

Charge Carrier Transport ◽

Effect Transistor ◽

Flight Measurements

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Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor

Nano Letters ◽

10.1021/nl049461z ◽

2004 ◽

Vol 4 (7) ◽

pp. 1247-1252 ◽

Cited By ~ 531

Author(s):

Hou T. Ng ◽

J. Han ◽

Toshishige Yamada ◽

P. Nguyen ◽

Yi P. Chen ◽

...

Keyword(s):

Single Crystal ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Correction: An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

Chemical Communications ◽

10.1039/c6cc90043g ◽

2016 ◽

Vol 52 (12) ◽

pp. 2647-2647

Author(s):

Jian Deng ◽

Yuanxiang Xu ◽

Liqun Liu ◽

Cunfang Feng ◽

Jia Tang ◽

...

Keyword(s):

Single Crystal ◽

Field Effect ◽

Field Effect Transistor ◽

High Mobility ◽

Organic Field Effect Transistor ◽

Effect Transistor

Correction for ‘An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1’ by Jian Deng et al., Chem. Commun., 2016, DOI: 10.1039/c5cc09702a.

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