scholarly journals Electric Field Tuning Molecular Packing and Electrical Properties of Solution-Shearing Coated Organic Semiconducting Thin Films

2017 ◽  
Vol 27 (8) ◽  
pp. 1605503 ◽  
Author(s):  
Francisco Molina-Lopez ◽  
Hongping Yan ◽  
Xiaodan Gu ◽  
Yeongin Kim ◽  
Michael F. Toney ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Electric Field ◽  
Molecular Packing ◽  
Semiconducting Thin Films

scholarly journals Investigation of the Structural, Optical and Electrical Properties of Cu3BiS3 Semiconducting Thin Films

2014 ◽  
Vol 60 ◽  
pp. 166-172 ◽  
Author(s):  
M.V. Yakushev ◽  
P. Maiello ◽  
T. Raadik ◽  
M.J. Shaw ◽  
P.R. Edwards ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Semiconducting Thin Films

Enhanced electrical properties of ferroelectric thin films with electric field induced domain control

2010 ◽  
Vol 173 (1-3) ◽  
pp. 25-28 ◽  
Author(s):  
Toshinari Noda ◽  
Naonori Sakamoto ◽  
Naoki Wakiya ◽  
Hisao Suzuki ◽  
Kazuki Komaki
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Electric Field ◽  
Ferroelectric Thin Films

scholarly journals Preparation features and electrical properties of Na0.5Bi0.5TiO3 thin films

2020 ◽  
Vol 28 (1) ◽  
pp. 33-38
Author(s):  
T. V. Kruzina ◽  
S. A. Popov ◽  
Yu. N. Potapovich ◽  
S. I. Ryabtsev ◽  
A. S. Rutskiy
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Electric Field ◽  
Perovskite Phase ◽  
Pyrochlore Phase ◽  
Ex Situ ◽  
Structural Defects ◽  
Leakage Currents ◽  
Si Substrates ◽  
Film Substrate

Some special features of Na0.5Bi0.5TiO3 (NBT) thin films preparation process and electrical properties of the films are presented. The NBT films were grown on both Pt/sitall and Pt/TiO2/SiO2/Si substrates by ex-situ method with high-frequency (13.56 MHz) magnetron deposition. Thermal treatment of the films was carried out in the temperature range 550°С – 700°С in air. Obtained X-ray diffraction data show that annealing at 700°C promotes crystallization of NBT films in ferroelectric perovskite phase with minor inclusions of pyrochlore phase. Dielectric hysteresis (P-E) loops in electric field of 90 kV/cm (50 Hz) and the current density-electric field (J-E) characteristics of the films are investigated. It is found that densities of leakage currents in weak fields depend on the film substrate and are significantly lower for the films deposited on the Pt/sitall structure (~6.9 10-10 A/cm2) in comparison with the films deposited on the Pt/TiO2/SiO2/Si structure (~10-6 A/cm2). The main mechanisms of leakage currents in thin NBT ferroelectric films and the role of structural defects in charge transfer process are discussed.

Non-Polar ZnO Thin Films and LED Devices

2014 ◽  
Vol 1053 ◽  
pp. 373-380 ◽  
Author(s):  
Long Li ◽  
Yong Zheng Fang ◽  
Jun Zou ◽  
Yue Feng Li
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Optical Properties ◽  
Electrical Properties ◽  
Electric Field ◽  
Quantum Wells ◽  
Strong Electric Field ◽  
Zno Thin Films ◽  
Third Generation ◽  
Optical Performance

ZnO materials have being researched in recent 30 years as a hot topic. ZnO is a third generation of semiconductor, it can be prepared into various forms of films and nanostructures, and they have excellent optical properties, electrical properties and magnetic properties. Because the polar ZnO’s quantum wells have a strong electric field, this will have a great impact on its optical properties. But non-polar ZnO has reduced such a strong electric field, so it greatly improved the luminescent performance. It’s more excellent than polar ZnO in the optical performance. In recent years, non-polar ZnO thin films’ research became increasingly evident. This article summed up the performances, preparations and applications of non-polar ZnO, and there are some suggestions. All of these are good to the further study of non-polar ZnO.

Formation of high temperature phase in flash-evaporated SnSe films

1990 ◽  
Vol 48 (4) ◽  
pp. 698-699
Author(s):  
J.P.S. Hanjra
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Gap ◽  
Dominant Role ◽  
Fine Powder ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
Water Mixture ◽  
Flash Evaporation ◽  
Photovoltaic Applications

Tin mono selenide (SnSe) with an energy gap of about 1 eV is a potential material for photovoltaic applications. Various authors have studied the structure, electronic and photoelectronic properties of thin films of SnSe grown by various deposition techniques. However, for practical photovoltaic junctions the electrical properties of SnSe films need improvement. We have carried out investigations into the properties of flash evaporated SnSe films. In this paper we report our results on the structure, which plays a dominant role on the electrical properties of thin films by TEM, SEM, and electron diffraction (ED).Thin films of SnSe were deposited by flash evaporation of SnSe fine powder prepared from high purity Sn and Se, onto glass, mica and KCl substrates in a vacuum of 2Ø micro Torr. A 15% HF + 2Ø% HNO3 solution was used to detach SnSe film from the glass and mica substrates whereas the film deposited on KCl substrate was floated over an ethanol water mixture by dissolution of KCl. The floating films were picked up on the grids for their EM analysis.

Structural and Electrical Properties of Thermally Evaporated SnxSe1-x Thin Films

2011 ◽  
Vol 3 (10) ◽  
pp. 1-4 ◽  
Author(s):  
Bushra A Hasan ◽  
◽  
Ghuson H Mohamed ◽  
Amer A Ramadhan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Structural And Electrical Properties
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