scholarly journals High Thermoelectric Performance in Supersaturated Solid Solutions and Nanostructured n-Type PbTe-GeTe

2018 ◽  
Vol 28 (31) ◽  
pp. 1801617 ◽  
Author(s):  
Zhong-Zhen Luo ◽  
Xiaomi Zhang ◽  
Xia Hua ◽  
Gangjian Tan ◽  
Trevor P. Bailey ◽  
...  
2021 ◽  
Vol 4 (3) ◽  
pp. 2899-2907
Author(s):  
Qingrui Xia ◽  
Pengzhan Ying ◽  
Zhongkang Han ◽  
Xie Li ◽  
Liangliang Xu ◽  
...  

1981 ◽  
Vol 7 ◽  
Author(s):  
J. S. Williams ◽  
K. T. Short

ABSTRACTHigh resolution Rutherford backscattering and channeling techniques have been used to investigate the formation and stability of supersaturated solid solutions of As, Sb, In, Pb, Tℓ and Bi implants in (100) silicon. In all cases nearsubstitutional solid solubilities far exceeding maximum equilibrium solubility limits can be achieved by furnace annealing at temperatures ≤ 600°C. Details of the recrystallisation process indicate that the maximum impurity concentration which can be incorporated onto silicon lattice sites may be controlled by impurity size and associated strain effects at the amorphous-crystal boundary during epitaxial regrowth.


2017 ◽  
Vol 5 (35) ◽  
pp. 18808-18815 ◽  
Author(s):  
Yuanbo Yang ◽  
Pengzhan Ying ◽  
Jinzhi Wang ◽  
Xianglian Liu ◽  
Zhengliang Du ◽  
...  

Through coordination of the Seebeck coefficient and carrier concentration in Cu3SnS4, TE performance improves significantly with the ZT value of 0.75 at 790 K.


1980 ◽  
Vol 37 (2) ◽  
pp. 170-172 ◽  
Author(s):  
S. U. Campisano ◽  
E. Rimini ◽  
P. Baeri ◽  
G. Foti

2019 ◽  
Vol 7 (3) ◽  
pp. 1045-1054 ◽  
Author(s):  
Hasbuna Kamila ◽  
Prashant Sahu ◽  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hoang-Ngan Pham ◽  
...  

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.


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