Completely Organic Multilayer Thin Film with Thermoelectric Power Factor Rivaling Inorganic Tellurides

2015 ◽  
Vol 27 (19) ◽  
pp. 2996-3001 ◽  
Author(s):  
Chungyeon Cho ◽  
Bart Stevens ◽  
Jui‐Hung Hsu ◽  
Ricky Bureau ◽  
David A. Hagen ◽  
...  
2015 ◽  
Vol 3 (40) ◽  
pp. 10451-10458 ◽  
Author(s):  
S. R. Bauers ◽  
D. R. Merrill ◽  
D. B. Moore ◽  
D. C. Johnson

Synthesis and electrical properties of kinetically stabilized (PbSe)1+δ(TiSe2)n thin-film intergrowths are reported for 1 ≤ n ≤ 18. The carriers donated to the TiSe2 from PbSe are diluted with increasing n, leading to a systematic increase in the Seebeck coefficient and thermoelectric power factor.


RSC Advances ◽  
2014 ◽  
Vol 4 (100) ◽  
pp. 57148-57152 ◽  
Author(s):  
Xiaohui Zhao ◽  
Haifeng Wang ◽  
Shufang Wang ◽  
Dogheche Elhadj ◽  
Jianglong Wang ◽  
...  

NaxCoO2/Au thin film multilayers, with a thickness of the Au layer of 0.5–12 nm, have been fabricated on c-Al2O3 by post annealing of the CoO/Au thin film multilayers in Na vapor at high temperature in air.


2021 ◽  
Author(s):  
Chun Hung Suen ◽  
Songhua Cai ◽  
Hui Li ◽  
Xiaodan Tang ◽  
Huichao Wang ◽  
...  

Abstract Achieving high thermoelectric power factor in thin film heterostructures is essential for integrated and miniaturized thermoelectric device applications. In this work, we demonstrate a mechanism to enhance thermoelectric power factor through coupling the interfacial confined two-dimensional electron gas (2DEG) with thin film conductivity in a transition metal dichalcogenides-SrTiO3 heterostructure. Owing to the formed conductive interface with two-dimensional electron confinement effect and the elevated conductivity, the ZrTe2/SrTiO3 (STO) heterostructure presents enormous thermoelectric power factor as high as 4×10^5 μW cm^(-1) K^(-2) at 20 K and 4800 μW cm^(-1) K^(-2) at room temperature. Interfacial reaction induced degradation of Ti cations valence number from Ti4+ to Ti3+ is attributed to be responsible for the formation of the quasi-two-dimensional electrons at the interface which results in very large Seebeck coefficient; and the enhanced electrical conductivity is suggested to be originated from the charge transfer induced doping in the ZrTe2. By taking the thermal conductivity of STO substrate as a reference, the effective zT value of this heterostructure can reach 15 at 300 K. This superior thermoelectric property makes this heterostructure a promising candidate for future thermoelectric device, and more importantly, paves a new pathway to design promising high-performance thermoelectric systems.


2019 ◽  
Vol 6 (6) ◽  
pp. 066420
Author(s):  
Anh Tuan Duong ◽  
Dinh Lam Nguyen ◽  
Manh Nghia Nguyen ◽  
Thi Minh Hai Nguyen ◽  
Anh Duc Nguyen ◽  
...  

2020 ◽  
Vol 4 (2) ◽  
pp. 597-604 ◽  
Author(s):  
Wenqian Yao ◽  
Lanlan Shen ◽  
Peipei Liu ◽  
Congcong Liu ◽  
Jingkun Xu ◽  
...  

Promising free-standing poly(thiophene-furan) gains a high thermoelectric power factor by facile electrochemical doping engineering.


2021 ◽  
Author(s):  
Chun Hung Suen ◽  
Songhua Cai ◽  
Hui Li ◽  
Long Zhang ◽  
Kunya Yang ◽  
...  

Abstract Achieving high thermoelectric power factor in thin film heterostructures is essential for integrated and miniatured thermoelectric device applications. In this work, we demonstrate a mechanism and device performance of enhanced thermoelectric power factor through coupling the interfacial confined two-dimensional electron gas (2DEG) with thin film conductivity in a transition metal dichalcogenides-SrTiO3 heterostructure. Owing to the formed conductive interface with two-dimensional electron confinement effect and the elevated conductivity, the ZrTe2/SrTiO3 (STO) heterostructure presents enormous thermoelectric power factor as high as 4×10^5 μW/cmK^2 at 20 K and 4800 μW/cmK^2 at room temperature. Formation of quasi-two-dimensional electrons gas at the interface is attributed to the giant Seebeck coefficient, and enhanced electrical conductivity is suggested to be originated from charge transfer induced doping in the ZrTe2, which leads to extremely large thermoelectric power factor. By taking the thermal conductivity of STO substrate as a reference, the effective zT value of this heterostructure can reach 1.5 at 300 K. This high thermoelectric figure of merit is demonstrated by a prototype device based on this heterostructure which results in 3K temperature cooling by passing through a current of 100 mA. This superior thermoelectric property makes this heterostructure a promising candidate for future thermoelectric device, and more importantly, paves a new pathway to design promising high-performance thermoelectric systems.


2021 ◽  
pp. 102493
Author(s):  
M.A. Gharavi ◽  
D. Gambino ◽  
A. le Febvrier ◽  
F. Eriksson ◽  
R. Armiento ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Natsumi Komatsu ◽  
Yota Ichinose ◽  
Oliver S. Dewey ◽  
Lauren W. Taylor ◽  
Mitchell A. Trafford ◽  
...  

AbstractLow-dimensional materials have recently attracted much interest as thermoelectric materials because of their charge carrier confinement leading to thermoelectric performance enhancement. Carbon nanotubes are promising candidates because of their one-dimensionality in addition to their unique advantages such as flexibility and light weight. However, preserving the large power factor of individual carbon nanotubes in macroscopic assemblies has been challenging, primarily due to poor sample morphology and a lack of proper Fermi energy tuning. Here, we report an ultrahigh value of power factor (14 ± 5 mW m−1 K−2) for macroscopic weavable fibers of aligned carbon nanotubes with ultrahigh electrical and thermal conductivity. The observed giant power factor originates from the ultrahigh electrical conductivity achieved through excellent sample morphology, combined with an enhanced Seebeck coefficient through Fermi energy tuning. We fabricate a textile thermoelectric generator based on these carbon nanotube fibers, which demonstrates high thermoelectric performance, weavability, and scalability. The giant power factor we observe make these fibers strong candidates for the emerging field of thermoelectric active cooling, which requires a large thermoelectric power factor and a large thermal conductivity at the same time.


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