2D Cu 9 S 5 /PtS 2 /WSe 2 Double Heterojunction Bipolar Transistor with High Current Gain

2021 ◽  
pp. 2106537
Author(s):  
Sanjun Yang ◽  
Lejing Pi ◽  
Liang Li ◽  
Kailang Liu ◽  
Ke Pei ◽  
...  
2008 ◽  
Vol 47-50 ◽  
pp. 383-386
Author(s):  
Jung Hui Tsai ◽  
Shao Yen Chiu ◽  
Wen Shiung Lour ◽  
Chien Ming Li ◽  
Yi Zhen Wu ◽  
...  

In this article, a novel InGaP/GaAs pnp δ-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a δ-doped sheet between two spacer layers at the emitter-base junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and an offset voltage of 100 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.


1990 ◽  
Vol 26 (6) ◽  
pp. 392 ◽  
Author(s):  
T. Ohishi ◽  
Y. Abe ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
T. Matsui

2018 ◽  
Vol 10 (5) ◽  
pp. 651-654
Author(s):  
Yi-Chen Wu ◽  
Jung-Hui Tsai ◽  
Syuan-Hao Liou ◽  
Pao-Sheng Lin ◽  
Yu-Chi Chen ◽  
...  

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