InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet between Base-Emitter Junction
2008 ◽
Vol 47-50
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pp. 383-386
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In this article, a novel InGaP/GaAs pnp δ-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a δ-doped sheet between two spacer layers at the emitter-base junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and an offset voltage of 100 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.
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2012 ◽
Vol 59
(12)
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pp. 3339-3343
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1991 ◽
Vol 38
(3)
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pp. 555-565
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