Nonvolatile Memory Device Based on Bipolar and Unipolar Resistive Switching in Bio-Organic Aloe Polysaccharides Thin Film

2018 ◽  
Vol 3 (5) ◽  
pp. 1800007 ◽  
Author(s):  
Zhe Xi Lim ◽  
Kuan Yew Cheong
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Nonvolatile Memory Device ◽  
Unipolar Resistive Switching

Observation of conductive filaments in a resistive switching nonvolatile memory device based on amorphous InGaZnO thin films

2013 ◽  
Vol 138 (2-3) ◽  
pp. 623-627 ◽  
Author(s):  
Youn Hee Kang ◽  
Tae Il Lee ◽  
Kyeong-Ju Moon ◽  
Jiwon Moon ◽  
Kwon Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Nonvolatile Memory Device ◽  
Amorphous Ingazno

S-Layer Protein for Resistive Switching and Flexible Nonvolatile Memory Device

2018 ◽  
Vol 10 (5) ◽  
pp. 4866-4873 ◽  
Author(s):  
Akshay Moudgil ◽  
Neeti Kalyani ◽  
Gaurav Sinsinbar ◽  
Samaresh Das ◽  
Prashant Mishra
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Nonvolatile Memory Device

Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device

2010 ◽  
Vol 96 (19) ◽  
pp. 193505 ◽  
Author(s):  
Hsin-Hung Huang ◽  
Wen-Chieh Shih ◽  
Chih-Huang Lai
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Nonvolatile Memory Device

Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9films

2018 ◽  
Vol 33 (5) ◽  
pp. 055009 ◽  
Author(s):  
Zhiwei Song ◽  
Gang Li ◽  
Ying Xiong ◽  
Chuanpin Cheng ◽  
Wanli Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Nonvolatile Memory Device

Facial synthesis of KCu7S4nanobelts for nonvolatile memory device applications

2016 ◽  
Vol 4 (3) ◽  
pp. 589-595 ◽  
Author(s):  
Chun-Yan Wu ◽  
Xin-Gang Wang ◽  
Zhi-Qiang Pan ◽  
You-Yi Wang ◽  
Yong-Qiang Yu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Schottky Diode ◽  
Retention Time ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Nonvolatile Memory Device ◽  
Device Applications ◽  
A Current

A memory device was fabricated based on KCu7S4nanobelts/Cu Schottky diode which displayed typical resistive switching behavior with a low set voltage of 0.4–1 V, a current ON/OFF ratio of ∼104, and a retention time >104s.

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