Coexistence of bipolar and unipolar resistive switching characteristics of thin TiO2 film grown on Cu foil substrate for flexible nonvolatile memory device

2017 ◽  
Vol 695 ◽  
pp. 2669-2671 ◽  
Author(s):  
Hongjun Wang ◽  
Yuanyuan Zhu ◽  
Dejun Fu
Keyword(s):  
Resistive Switching ◽  
Tio2 Film ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Nonvolatile Memory Device ◽  
Switching Characteristics ◽  
Cu Foil ◽  
Foil Substrate ◽  
Unipolar Resistive Switching

Observation of conductive filaments in a resistive switching nonvolatile memory device based on amorphous InGaZnO thin films

2013 ◽  
Vol 138 (2-3) ◽  
pp. 623-627 ◽  
Author(s):  
Youn Hee Kang ◽  
Tae Il Lee ◽  
Kyeong-Ju Moon ◽  
Jiwon Moon ◽  
Kwon Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Nonvolatile Memory Device ◽  
Amorphous Ingazno

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

2008 ◽  
Vol 92 (2) ◽  
pp. 022110 ◽  
Author(s):  
Wen-Yuan Chang ◽  
Yen-Chao Lai ◽  
Tai-Bor Wu ◽  
Sea-Fue Wang ◽  
Frederick Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Zno Thin Films ◽  
Switching Characteristics ◽  
Memory Applications ◽  
Unipolar Resistive Switching

S-Layer Protein for Resistive Switching and Flexible Nonvolatile Memory Device

2018 ◽  
Vol 10 (5) ◽  
pp. 4866-4873 ◽  
Author(s):  
Akshay Moudgil ◽  
Neeti Kalyani ◽  
Gaurav Sinsinbar ◽  
Samaresh Das ◽  
Prashant Mishra
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Nonvolatile Memory Device
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